In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors

Hamelmann F, Klipp A, Petri SHA, Haindl G, Hartwich J, Kleineberg U, Jutzi P, Heinzmann U (2000)
In: Organosilicon Chemistry IV: from Molecules to Materials. Auer N, Weis J (Eds); Weinheim: Wiley-VCH: 798-798.

Konferenzbeitrag | Veröffentlicht | Englisch
 
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Autor*in
Hamelmann, FrankUniBi; Klipp, A.; Petri, S.H.A.; Haindl, G.; Hartwich, J.; Kleineberg, U.; Jutzi, PeterUniBi; Heinzmann, UlrichUniBi
Herausgeber*in
Auer, Norbert; Weis, Johann
Erscheinungsjahr
2000
Titel des Konferenzbandes
Organosilicon Chemistry IV: from Molecules to Materials
Seite(n)
798-798
Konferenz
4. Münchner Silicontage
ISBN
3-527-29854-1
Page URI
https://pub.uni-bielefeld.de/record/1883600

Zitieren

Hamelmann F, Klipp A, Petri SHA, et al. In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors. In: Auer N, Weis J, eds. Organosilicon Chemistry IV: from Molecules to Materials. Weinheim: Wiley-VCH; 2000: 798-798.
Hamelmann, F., Klipp, A., Petri, S. H. A., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., et al. (2000). In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors. In N. Auer & J. Weis (Eds.), Organosilicon Chemistry IV: from Molecules to Materials (pp. 798-798). Weinheim: Wiley-VCH.
Hamelmann, F., Klipp, A., Petri, S. H. A., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., and Heinzmann, U. (2000). “In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors” in Organosilicon Chemistry IV: from Molecules to Materials, Auer, N., and Weis, J. eds. (Weinheim: Wiley-VCH), 798-798.
Hamelmann, F., et al., 2000. In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors. In N. Auer & J. Weis, eds. Organosilicon Chemistry IV: from Molecules to Materials. Weinheim: Wiley-VCH, pp. 798-798.
F. Hamelmann, et al., “In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors”, Organosilicon Chemistry IV: from Molecules to Materials, N. Auer and J. Weis, eds., Weinheim: Wiley-VCH, 2000, pp.798-798.
Hamelmann, F., Klipp, A., Petri, S.H.A., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., Heinzmann, U.: In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors. In: Auer, N. and Weis, J. (eds.) Organosilicon Chemistry IV: from Molecules to Materials. p. 798-798. Wiley-VCH, Weinheim (2000).
Hamelmann, Frank, Klipp, A., Petri, S.H.A., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, Peter, and Heinzmann, Ulrich. “In situ controlled deposition of thin silicon films by hot filament MOCVD with (C5Me5) Si2H5 and (C5Me4H)SiH3 as silicon precursors”. Organosilicon Chemistry IV: from Molecules to Materials. Ed. Norbert Auer and Johann Weis. Weinheim: Wiley-VCH, 2000. 798-798.

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