Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films
Schulz S, Fahrenholz S, Schuchmann D, Kuczkowski A, Assenmacher W, Reilmann F, Bahlawane N, Kohse-Höinghaus K (2007)
SURFACE & COATINGS TECHNOLOGY 201(22-23): 9071-9075.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Schulz, Stephan;
Fahrenholz, Sonja;
Schuchmann, Daniella;
Kuczkowski, Andreas;
Assenmacher, Wilftied;
Reilmann, FrankUniBi;
Bahlawane, NaoufalUniBi 
;
Kohse-Höinghaus, KatharinaUniBi
;
Kohse-Höinghaus, KatharinaUniBiEinrichtung
Abstract / Bemerkung
Tailor-made single source precursors of the type [R2GaSbR'(2)](x) (R, R'=alkyl) have been prepared by 4 novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of Gash material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed. (c) 2007 Elsevier B.V. All rights reserved.
Stichworte
compound semiconductors;
organometallic CVD;
gallium antimonide
Erscheinungsjahr
2007
Zeitschriftentitel
SURFACE & COATINGS TECHNOLOGY
Band
201
Ausgabe
22-23
Seite(n)
9071-9075
ISSN
0257-8972
Page URI
https://pub.uni-bielefeld.de/record/1632420
Zitieren
Schulz S, Fahrenholz S, Schuchmann D, et al. Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY. 2007;201(22-23):9071-9075.
Schulz, S., Fahrenholz, S., Schuchmann, D., Kuczkowski, A., Assenmacher, W., Reilmann, F., Bahlawane, N., et al. (2007). Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9071-9075. https://doi.org/10.1016/j.surfcoat.2007.03.045
Schulz, Stephan, Fahrenholz, Sonja, Schuchmann, Daniella, Kuczkowski, Andreas, Assenmacher, Wilftied, Reilmann, Frank, Bahlawane, Naoufal, and Kohse-Höinghaus, Katharina. 2007. “Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films”. SURFACE & COATINGS TECHNOLOGY 201 (22-23): 9071-9075.
Schulz, S., Fahrenholz, S., Schuchmann, D., Kuczkowski, A., Assenmacher, W., Reilmann, F., Bahlawane, N., and Kohse-Höinghaus, K. (2007). Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY 201, 9071-9075.
Schulz, S., et al., 2007. Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY, 201(22-23), p 9071-9075.
S. Schulz, et al., “Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films”, SURFACE & COATINGS TECHNOLOGY, vol. 201, 2007, pp. 9071-9075.
Schulz, S., Fahrenholz, S., Schuchmann, D., Kuczkowski, A., Assenmacher, W., Reilmann, F., Bahlawane, N., Kohse-Höinghaus, K.: Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY. 201, 9071-9075 (2007).
Schulz, Stephan, Fahrenholz, Sonja, Schuchmann, Daniella, Kuczkowski, Andreas, Assenmacher, Wilftied, Reilmann, Frank, Bahlawane, Naoufal, and Kohse-Höinghaus, Katharina. “Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films”. SURFACE & COATINGS TECHNOLOGY 201.22-23 (2007): 9071-9075.
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