W/Si multilayers deposited by hot-filament MOCVD
Hamelmann F, Petri SHA, Klipp A, Haindl G, Hartwich J, Dreeskornfeld L, Kleineberg U, Jutzi P, Heinzmann U (1999)
THIN SOLID FILMS 338(1-2): 70-74.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Hamelmann, FrankUniBi;
Petri, SHA;
Klipp, A;
Haindl, G;
Hartwich, J;
Dreeskornfeld, L;
Kleineberg, U;
Jutzi, PeterUniBi;
Heinzmann, UlrichUniBi
Einrichtung
Abstract / Bemerkung
W/Si multilayers with eight double layers (double layer spacing d = 20 nm) were deposited on Si [100] substrates using hot-filament (or hot-wire) metal organic chemical vapor deposition (MOCVD). The process was performed in a stainless steel reactor with a tungsten filament at a temperature of 1000 degrees C and a substrate temperature of 190 degrees C. The him thickness and growth was controlled by an in situ soft X-ray reflectivity measurement. The multilayers were characterized by cross-section transmission electron microscopy (XTEM) and sputter auger electron spectroscopy (AES). The results are compared to W/Si bilayers, which were deposited without a hot-filament at higher substrate temperatures (500-670 degrees C). (C) 1999 Elsevier Science S.A. All rights reserved.
Stichworte
silicon;
chemical vapour deposition (CVD);
tungsten;
multilayers
Erscheinungsjahr
1999
Zeitschriftentitel
THIN SOLID FILMS
Band
338
Ausgabe
1-2
Seite(n)
70-74
ISSN
0040-6090
Page URI
https://pub.uni-bielefeld.de/record/1623447
Zitieren
Hamelmann F, Petri SHA, Klipp A, et al. W/Si multilayers deposited by hot-filament MOCVD. THIN SOLID FILMS. 1999;338(1-2):70-74.
Hamelmann, F., Petri, S. H. A., Klipp, A., Haindl, G., Hartwich, J., Dreeskornfeld, L., Kleineberg, U., et al. (1999). W/Si multilayers deposited by hot-filament MOCVD. THIN SOLID FILMS, 338(1-2), 70-74. https://doi.org/10.1016/S0040-6090(98)00996-1
Hamelmann, Frank, Petri, SHA, Klipp, A, Haindl, G, Hartwich, J, Dreeskornfeld, L, Kleineberg, U, Jutzi, Peter, and Heinzmann, Ulrich. 1999. “W/Si multilayers deposited by hot-filament MOCVD”. THIN SOLID FILMS 338 (1-2): 70-74.
Hamelmann, F., Petri, S. H. A., Klipp, A., Haindl, G., Hartwich, J., Dreeskornfeld, L., Kleineberg, U., Jutzi, P., and Heinzmann, U. (1999). W/Si multilayers deposited by hot-filament MOCVD. THIN SOLID FILMS 338, 70-74.
Hamelmann, F., et al., 1999. W/Si multilayers deposited by hot-filament MOCVD. THIN SOLID FILMS, 338(1-2), p 70-74.
F. Hamelmann, et al., “W/Si multilayers deposited by hot-filament MOCVD”, THIN SOLID FILMS, vol. 338, 1999, pp. 70-74.
Hamelmann, F., Petri, S.H.A., Klipp, A., Haindl, G., Hartwich, J., Dreeskornfeld, L., Kleineberg, U., Jutzi, P., Heinzmann, U.: W/Si multilayers deposited by hot-filament MOCVD. THIN SOLID FILMS. 338, 70-74 (1999).
Hamelmann, Frank, Petri, SHA, Klipp, A, Haindl, G, Hartwich, J, Dreeskornfeld, L, Kleineberg, U, Jutzi, Peter, and Heinzmann, Ulrich. “W/Si multilayers deposited by hot-filament MOCVD”. THIN SOLID FILMS 338.1-2 (1999): 70-74.
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