Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films
Klipp A, Hamelmann F, Haindl G, Hartwich J, Kleineberg U, Jutzi P, Heinzmann U (2000)
CHEMICAL VAPOR DEPOSITION 6(2): 63-66.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Klipp, A;
Hamelmann, FrankUniBi;
Haindl, G;
Hartwich, J;
Kleineberg, U;
Jutzi, PeterUniBi;
Heinzmann, UlrichUniBi
Einrichtung
Abstract / Bemerkung
There is a strong demand for alternative precursors for Si CVD that do not have the problems of highly pyrophoric silanes. Me5C5Si2H5 is an easy to handle liquid precursor that shows promise for CVD of Si-containing films. The fragmentation process (see Figure) has been studied by in-situ mass spectrometry and the pronounced leaving group character results in no carbon incorporation.
Erscheinungsjahr
2000
Zeitschriftentitel
CHEMICAL VAPOR DEPOSITION
Band
6
Ausgabe
2
Seite(n)
63-66
ISSN
0948-1907
eISSN
1521-3862
Page URI
https://pub.uni-bielefeld.de/record/1620153
Zitieren
Klipp A, Hamelmann F, Haindl G, et al. Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION. 2000;6(2):63-66.
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., & Heinzmann, U. (2000). Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION, 6(2), 63-66. https://doi.org/10.1002/(SICI)1521-3862(200004)6:2<63::AID-CVDE63>3.0.CO;2-Q
Klipp, A, Hamelmann, Frank, Haindl, G, Hartwich, J, Kleineberg, U, Jutzi, Peter, and Heinzmann, Ulrich. 2000. “Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films”. CHEMICAL VAPOR DEPOSITION 6 (2): 63-66.
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., and Heinzmann, U. (2000). Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION 6, 63-66.
Klipp, A., et al., 2000. Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION, 6(2), p 63-66.
A. Klipp, et al., “Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films”, CHEMICAL VAPOR DEPOSITION, vol. 6, 2000, pp. 63-66.
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., Heinzmann, U.: Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION. 6, 63-66 (2000).
Klipp, A, Hamelmann, Frank, Haindl, G, Hartwich, J, Kleineberg, U, Jutzi, Peter, and Heinzmann, Ulrich. “Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films”. CHEMICAL VAPOR DEPOSITION 6.2 (2000): 63-66.
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