Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction
Aschentrup A, Hachmann W, Westerwalbesloh T, Lim YC, Kleineberg U, Heinzmann U (2003)
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 77(5): 607-611.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Aschentrup, A;
Hachmann, WiebkeUniBi;
Westerwalbesloh, T;
Lim, YC;
Kleineberg, U;
Heinzmann, UlrichUniBi
Einrichtung
Abstract / Bemerkung
We present a method of deriving single layer thickness fluctuations of Mo/Si EUV multilayers from cross-sectional high-resolution transmission electron microscopy micrographs. The obtained thickness values for each layer are used in a layer model to calculate the grazing-incidence X-ray reflectivity (GIXRR) and the corresponding at-wavelength-reflectivity curves. Comparison with XRR measurements shows the strong effect of thickness fluctuations on the intensity of the secondary Kiessig fringes and the main Bragg maxima. This model results in substantially better reflectivity simulations than the standard periodic four-layer model or the assumption of statistically distributed (random) thickness errors. Results for reflectivity curves at 13-nm wavelength are discussed in terms of peak reflectivity, peak shift and further changes in the shape of the reflectivity curve.
Erscheinungsjahr
2003
Zeitschriftentitel
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Band
77
Ausgabe
5
Seite(n)
607-611
ISSN
0947-8396
eISSN
1432-0630
Page URI
https://pub.uni-bielefeld.de/record/1610694
Zitieren
Aschentrup A, Hachmann W, Westerwalbesloh T, Lim YC, Kleineberg U, Heinzmann U. Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. 2003;77(5):607-611.
Aschentrup, A., Hachmann, W., Westerwalbesloh, T., Lim, Y. C., Kleineberg, U., & Heinzmann, U. (2003). Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 77(5), 607-611. https://doi.org/10.1007/s00339-003-2130-8
Aschentrup, A, Hachmann, Wiebke, Westerwalbesloh, T, Lim, YC, Kleineberg, U, and Heinzmann, Ulrich. 2003. “Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction”. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 77 (5): 607-611.
Aschentrup, A., Hachmann, W., Westerwalbesloh, T., Lim, Y. C., Kleineberg, U., and Heinzmann, U. (2003). Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 77, 607-611.
Aschentrup, A., et al., 2003. Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 77(5), p 607-611.
A. Aschentrup, et al., “Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction”, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol. 77, 2003, pp. 607-611.
Aschentrup, A., Hachmann, W., Westerwalbesloh, T., Lim, Y.C., Kleineberg, U., Heinzmann, U.: Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. 77, 607-611 (2003).
Aschentrup, A, Hachmann, Wiebke, Westerwalbesloh, T, Lim, YC, Kleineberg, U, and Heinzmann, Ulrich. “Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction”. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 77.5 (2003): 607-611.
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