Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions
Hamelmann F, Aschentrup A, Brechling A, Heinzmann U, Gushterov A, Szekeres A, Simeonov S (2004)
Vacuum 75(4): 307-312.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Hamelmann, FrankUniBi;
Aschentrup, A;
Brechling, ArminUniBi;
Heinzmann, UlrichUniBi;
Gushterov, A;
Szekeres, A;
Simeonov, S
Einrichtung
Abstract / Bemerkung
Silicon oxide thin films have been deposited in plasma-assisted CVD process. With tetraethylorthosilcate (TEOS, Si(OC2H5)(4)) as precursor and an oxygen RF-plasma, thin films of 50-100 nm were deposited on silicon wafers. The deposition process was controlled in situ by monitoring the soft X-ray reflectivity of the growing layer. The influence of additional gases such as nitrogen and changes of the plasma conditions on the resulting films have been studied by analyzing the films with grazing incidence X-ray reflectometry, infrared spectroscopy, spectral ellipsometry and capacitance-voltage and current-voltage measurements were performed at different temperatures. (C) 2004 Elsevier Ltd. All rights reserved.
Stichworte
silicon oxide;
thin films;
plasma-enhanced CVD
Erscheinungsjahr
2004
Zeitschriftentitel
Vacuum
Band
75
Ausgabe
4
Seite(n)
307-312
ISSN
0042-207X
Page URI
https://pub.uni-bielefeld.de/record/1606874
Zitieren
Hamelmann F, Aschentrup A, Brechling A, et al. Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum. 2004;75(4):307-312.
Hamelmann, F., Aschentrup, A., Brechling, A., Heinzmann, U., Gushterov, A., Szekeres, A., & Simeonov, S. (2004). Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum, 75(4), 307-312. https://doi.org/10.1016/j.vacuum.2004.03.012
Hamelmann, Frank, Aschentrup, A, Brechling, Armin, Heinzmann, Ulrich, Gushterov, A, Szekeres, A, and Simeonov, S. 2004. “Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions”. Vacuum 75 (4): 307-312.
Hamelmann, F., Aschentrup, A., Brechling, A., Heinzmann, U., Gushterov, A., Szekeres, A., and Simeonov, S. (2004). Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum 75, 307-312.
Hamelmann, F., et al., 2004. Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum, 75(4), p 307-312.
F. Hamelmann, et al., “Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions”, Vacuum, vol. 75, 2004, pp. 307-312.
Hamelmann, F., Aschentrup, A., Brechling, A., Heinzmann, U., Gushterov, A., Szekeres, A., Simeonov, S.: Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum. 75, 307-312 (2004).
Hamelmann, Frank, Aschentrup, A, Brechling, Armin, Heinzmann, Ulrich, Gushterov, A, Szekeres, A, and Simeonov, S. “Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions”. Vacuum 75.4 (2004): 307-312.
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