Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films

Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U (2005)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7(1): 553-556.

Konferenzbeitrag | Veröffentlicht | Englisch
 
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Autor*in
Szekeres, A; Simeonov, S; Gushterov, A; Nikolova, T; Hamelmann, FrankUniBi; Heinzmann, UlrichUniBi
Abstract / Bemerkung
The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 degrees C in a RF-plasma CVD reactor using Si(OC2H5)(4) (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films.
Stichworte
RF plasma CVD deposition; traps; interface; silicon oxynitride; oxide resistivity; oxide charges
Erscheinungsjahr
2005
Band
7
Ausgabe
1
Seite(n)
553-556
ISSN
1454-4164
Page URI
https://pub.uni-bielefeld.de/record/1604367

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Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2005;7(1):553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., & Heinzmann, U. (2005). Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), 553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., and Heinzmann, U. (2005). Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7, 553-556.
Szekeres, A., et al., 2005. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), p 553-556.
A. Szekeres, et al., “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, 2005, pp. 553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., Heinzmann, U.: Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7, 553-556 (2005).
Szekeres, A, Simeonov, S, Gushterov, A, Nikolova, T, Hamelmann, Frank, and Heinzmann, Ulrich. “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7.1 (2005): 553-556.