Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films
Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U (2005)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7(1): 553-556.
Konferenzbeitrag
| Veröffentlicht | Englisch
Download
Es wurden keine Dateien hochgeladen. Nur Publikationsnachweis!
Autor*in
Szekeres, A;
Simeonov, S;
Gushterov, A;
Nikolova, T;
Hamelmann, FrankUniBi;
Heinzmann, UlrichUniBi
Einrichtung
Abstract / Bemerkung
The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 degrees C in a RF-plasma CVD reactor using Si(OC2H5)(4) (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films.
Stichworte
RF plasma CVD deposition;
traps;
interface;
silicon oxynitride;
oxide resistivity;
oxide charges
Erscheinungsjahr
2005
Serien- oder Zeitschriftentitel
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Band
7
Ausgabe
1
Seite(n)
553-556
ISSN
1454-4164
Page URI
https://pub.uni-bielefeld.de/record/1604367
Zitieren
Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2005;7(1):553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., & Heinzmann, U. (2005). Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), 553-556.
Szekeres, A, Simeonov, S, Gushterov, A, Nikolova, T, Hamelmann, Frank, and Heinzmann, Ulrich. 2005. “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7 (1): 553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., and Heinzmann, U. (2005). Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7, 553-556.
Szekeres, A., et al., 2005. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), p 553-556.
A. Szekeres, et al., “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, 2005, pp. 553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., Heinzmann, U.: Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7, 553-556 (2005).
Szekeres, A, Simeonov, S, Gushterov, A, Nikolova, T, Hamelmann, Frank, and Heinzmann, Ulrich. “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7.1 (2005): 553-556.
Export
Markieren/ Markierung löschen
Markierte Publikationen
Web of Science
Dieser Datensatz im Web of Science®Suchen in
Google Scholar