Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis
Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T (2005)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7(1): 389-392.
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Autor*in
Hamelmann, FrankUniBi;
Heinzmann, UlrichUniBi;
Szekeres, A;
Kirov, N;
Nikolova, T
Einrichtung
Abstract / Bemerkung
Silicon oxide thin films deposited on Si substrates in a RF-plasma CVD reactor, using Si(OC2H5)(4) (TEOS) as the precursor and oxygen as the gas ambient, were studied by IR spectrophotometry. All depositions were performed at a substrate temperature of 200 degrees C, a plasma power of 20 or 80 W and with a DC-bias of -120 V applied to the Si substrate. The observed IR peaks were assigned to corresponding vibrational modes. Peaks related to Si-H, C-H and OH bond vibrations were also detected. Some degree of porosity exists, resulting in a lower refractive index of the films than that typical for SiO2 material.
Stichworte
thin films;
silicon oxides;
optical properties;
IR spectroscopy
Erscheinungsjahr
2005
Serien- oder Zeitschriftentitel
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Band
7
Ausgabe
1
Seite(n)
389-392
ISSN
1454-4164
Page URI
https://pub.uni-bielefeld.de/record/1604354
Zitieren
Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T. Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2005;7(1):389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., & Nikolova, T. (2005). Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), 389-392.
Hamelmann, Frank, Heinzmann, Ulrich, Szekeres, A, Kirov, N, and Nikolova, T. 2005. “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7 (1): 389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., and Nikolova, T. (2005). Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7, 389-392.
Hamelmann, F., et al., 2005. Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), p 389-392.
F. Hamelmann, et al., “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, 2005, pp. 389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., Nikolova, T.: Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7, 389-392 (2005).
Hamelmann, Frank, Heinzmann, Ulrich, Szekeres, A, Kirov, N, and Nikolova, T. “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7.1 (2005): 389-392.
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