Please note that PUB no longer supports Internet Explorer versions 8 or 9 (or earlier).

We recommend upgrading to the latest Internet Explorer, Google Chrome, or Firefox.

23 Publikationen

2011 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 2289502
Application of n-(Bu2)Sn(acac)2 for the deposition of nanocrystallite SnO2 films: Nucleation, growth and physical properties
Jiang Y, Sun W, Yan M, Bahlawane N (2011)
JOURNAL OF ALLOYS AND COMPOUNDS 509(29): 7798-7802.
PUB | DOI | WoS
 
2011 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 2440798
Rational Design of Functional Oxide Thin Films with Embedded Magnetic or Plasmonic Metallic Nanoparticles
Bahlawane N, Kohse-Höinghaus K, Weimann T, Hinze P, Röhe S, Bäumer M (2011)
ANGEWANDTE CHEMIE INTERNATIONAL EDITION 50(42): 9957-9960.
PUB | DOI | WoS | PubMed | Europe PMC
 
2011 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 2094432
CVD of Ru, Pt and Pt-based alloy thin films using ethanol as mild reducing agent
Premkumar PA, Prakash NS, Gaillard F, Bahlawane N (2011)
MATERIALS CHEMISTRY AND PHYSICS 125(3): 757-762.
PUB | DOI | WoS
 
2009 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1634318
Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M = Co, Fe, Cr and Mn) thin films
Tchoua Ngamou PH, Bahlawane N (2009)
JOURNAL OF SOLID STATE CHEMISTRY 182(4): 849-854.
PUB | DOI | WoS
 
2009 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1589799
Electrochromic mixed films based On WO3 and MoO3, obtained by an APCVD method
Ivanova T, Gesheva KA, Kalitzova M, Hamelmann F, Lükermann F, Heinzmann U (2009)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 11(10): 1513-1516.
PUB | WoS
 
2008 | Bielefelder E-Dissertation | PUB-ID: 2302419 PUB | PDF
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1632420
Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films
Schulz S, Fahrenholz S, Schuchmann D, Kuczkowski A, Assenmacher W, Reilmann F, Bahlawane N, Kohse-Höinghaus K (2007)
SURFACE & COATINGS TECHNOLOGY 201(22-23): 9071-9075.
PUB | DOI | WoS
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1631529
Self-catalyzed chemical vapor deposition method for the growth of device-quality metal thin films
Bahlawane N, Premkumar PA, Onwuka K, Kohse-Höinghaus K, Reiss G (2007)
MICROELECTRONIC ENGINEERING 84(11): 2481-2485.
PUB | DOI | WoS
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1632872
Alcohol-assisted CVD of silver using commercially available precursors
Bahlawane N, Premkumar PA, Brechling A, Reiss G, Kohse-Höinghaus K (2007)
CHEMICAL VAPOR DEPOSITION 13(8): 401-407.
PUB | DOI | WoS
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1595053
Preparation of doped spinel cobalt oxide thin films and evaluation of their thermal stability
Bahlawane N, Premkumar PA, Feldmann J, Kohse-Höinghaus K (2007)
CHEMICAL VAPOR DEPOSITION 13(2-3): 118-122.
PUB | DOI | WoS
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1593710 PUB | DOI | WoS
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1593715
CVD of metals using alcohols and metal acetylacetonates, Part II: Role of solvent and characterization of metal films made by pulsed spray evaporation CVD
Premkumar PA, Bahlawane N, Reiss G, Kohse-Höinghaus K (2007)
CHEMICAL VAPOR DEPOSITION 13(5): 227-231.
PUB | DOI | WoS
 
2007 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1632412
Catalytically enhanced H2-free CVD of transition metals using commercially available precursors
Bahlawane N, Premkumar PA, Onwuka K, Rott K, Reiss G, Kohse-Höinghaus K (2007)
SURFACE & COATINGS TECHNOLOGY 201(22-23): 8914-8918.
PUB | DOI | WoS
 
 
2006 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1601030
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U (2006)
MICROELECTRONICS JOURNAL 37(1): 64-70.
PUB | DOI | WoS
 
2005 | Konferenzbeitrag | Veröffentlicht | PUB-ID: 1604367
Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films
Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U (2005)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7(1): 553-556.
PUB | WoS
 
2005 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1603904
High-growth-rate chemical vapor deposition of silicon: an experimental and modeling approach
Atakan B, Hofstatter M, Kohse-Höinghaus K (2005)
ZEITSCHRIFT FÜR PHYSIKALISCHE CHEMIE 219(5-2005): 649-664.
PUB | DOI | WoS
 
 
2004 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1606874
Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions
Hamelmann F, Aschentrup A, Brechling A, Heinzmann U, Gushterov A, Szekeres A, Simeonov S (2004)
Vacuum 75(4): 307-312.
PUB | DOI | WoS
 
2004 | Zeitschriftenaufsatz | Veröffentlicht | PUB-ID: 1876131
Characterization and tests of planar Co3O4 model catalysts prepared by chemical vapor deposition
Bahlawane N, Fischer Rivera E, Kohse-Höinghaus K, Brechling A, Kleineberg U (2004)
Applied Catalysis B - Environmental 53(4): 245-255.
PUB | DOI | WoS
 

Filter und Suchbegriffe

keyword="CVD"

Suche

Publikationen filtern

Darstellung / Sortierung

Export / Einbettung