Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime
Mics Z, D'Angio A, Jensen SA, Bonn M, Turchinovich D (2013)
Applied Physics Letters 102(23).
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Mics, Zoltán;
D'Angio, Andrea;
Jensen, Søren A.;
Bonn, Mischa;
Turchinovich, DmitryUniBi
Einrichtung
Abstract / Bemerkung
In a series of systematic optical pump–terahertz probe experiments, we study the density-dependent electron scattering rate in photoexcited GaAs in the regime of strong carrier diffusion. The terahertz frequency-resolved transient sheet conductivity spectra are perfectly described by the Drude model, directly yielding the electron scattering rates. A diffusion model is applied to determine the spatial extent of the photoexcited electron-hole gas at each moment after photoexcitation, yielding the time-dependent electron density, and hence the density-dependent electron scattering time. We find that the electron scattering time decreases from 320 to 60 fs, as the electron density changes from 1015 to 1019 cm−3.
Erscheinungsjahr
2013
Zeitschriftentitel
Applied Physics Letters
Band
102
Ausgabe
23
ISSN
0003-6951
eISSN
1077-3118
Page URI
https://pub.uni-bielefeld.de/record/2983639
Zitieren
Mics Z, D'Angio A, Jensen SA, Bonn M, Turchinovich D. Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime. Applied Physics Letters. 2013;102(23).
Mics, Z., D'Angio, A., Jensen, S. A., Bonn, M., & Turchinovich, D. (2013). Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime. Applied Physics Letters, 102(23). https://doi.org/10.1063/1.4810756
Mics, Zoltán, D'Angio, Andrea, Jensen, Søren A., Bonn, Mischa, and Turchinovich, Dmitry. 2013. “Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime”. Applied Physics Letters 102 (23).
Mics, Z., D'Angio, A., Jensen, S. A., Bonn, M., and Turchinovich, D. (2013). Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime. Applied Physics Letters 102.
Mics, Z., et al., 2013. Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime. Applied Physics Letters, 102(23).
Z. Mics, et al., “Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime”, Applied Physics Letters, vol. 102, 2013.
Mics, Z., D'Angio, A., Jensen, S.A., Bonn, M., Turchinovich, D.: Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime. Applied Physics Letters. 102, (2013).
Mics, Zoltán, D'Angio, Andrea, Jensen, Søren A., Bonn, Mischa, and Turchinovich, Dmitry. “Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime”. Applied Physics Letters 102.23 (2013).
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