Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy

Turchinovich D, D'Angelo F, Bonn M (2017)
Applied Physics Letters 110(12).

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Turchinovich, DmitryUniBi; D'Angelo, Francesco; Bonn, Mischa
Abstract / Bemerkung
The buildup of photoconductivity in an archetypal polar semiconductor GaAs was monitored on the timescale of carrier-carrier and carrier-lattice correlations, with sub-50 fs temporal resolution provided by ultra-broadband transient terahertz spectroscopy. Two relevant timescales are identified: the transition in photoconductivity from a regime of extremely weak screening to a screened Drude plasma was observed on the ∼280 fs timescale, followed by the gradual increase and saturation of electron mobility on a timescale of ∼160 fs. The Drude photoconductivity picture following carrier photoinjection was found to stabilize only on the timescale corresponding to several lattice and plasma oscillations.
Erscheinungsjahr
2017
Zeitschriftentitel
Applied Physics Letters
Band
110
Ausgabe
12
ISSN
0003-6951
eISSN
1077-3118
Page URI
https://pub.uni-bielefeld.de/record/2983634

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Turchinovich D, D'Angelo F, Bonn M. Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy. Applied Physics Letters. 2017;110(12).
Turchinovich, D., D'Angelo, F., & Bonn, M. (2017). Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy. Applied Physics Letters, 110(12). https://doi.org/10.1063/1.4978648
Turchinovich, Dmitry, D'Angelo, Francesco, and Bonn, Mischa. 2017. “Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy”. Applied Physics Letters 110 (12).
Turchinovich, D., D'Angelo, F., and Bonn, M. (2017). Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy. Applied Physics Letters 110.
Turchinovich, D., D'Angelo, F., & Bonn, M., 2017. Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy. Applied Physics Letters, 110(12).
D. Turchinovich, F. D'Angelo, and M. Bonn, “Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy”, Applied Physics Letters, vol. 110, 2017.
Turchinovich, D., D'Angelo, F., Bonn, M.: Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy. Applied Physics Letters. 110, (2017).
Turchinovich, Dmitry, D'Angelo, Francesco, and Bonn, Mischa. “Femtosecond-timescale buildup of electron mobility in GaAs observed via ultrabroadband transient terahertz spectroscopy”. Applied Physics Letters 110.12 (2017).
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