InAs/GaAs quantum dots as efficient free carrier deep traps
Turchinovich D, Pierz K, Uhd Jepsen P (2003)
physica status solidi (c) (5): 1556-1559.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Turchinovich, DmitryUniBi;
Pierz, K.;
Uhd Jepsen, P.
Einrichtung
Erscheinungsjahr
2003
Zeitschriftentitel
physica status solidi (c)
Ausgabe
5
Seite(n)
1556-1559
ISSN
1610-1634
Page URI
https://pub.uni-bielefeld.de/record/2983590
Zitieren
Turchinovich D, Pierz K, Uhd Jepsen P. InAs/GaAs quantum dots as efficient free carrier deep traps. physica status solidi (c). 2003;(5):1556-1559.
Turchinovich, D., Pierz, K., & Uhd Jepsen, P. (2003). InAs/GaAs quantum dots as efficient free carrier deep traps. physica status solidi (c)(5), 1556-1559. https://doi.org/10.1002/pssc.200303230
Turchinovich, Dmitry, Pierz, K., and Uhd Jepsen, P. 2003. “InAs/GaAs quantum dots as efficient free carrier deep traps”. physica status solidi (c), no. 5: 1556-1559.
Turchinovich, D., Pierz, K., and Uhd Jepsen, P. (2003). InAs/GaAs quantum dots as efficient free carrier deep traps. physica status solidi (c), 1556-1559.
Turchinovich, D., Pierz, K., & Uhd Jepsen, P., 2003. InAs/GaAs quantum dots as efficient free carrier deep traps. physica status solidi (c), (5), p 1556-1559.
D. Turchinovich, K. Pierz, and P. Uhd Jepsen, “InAs/GaAs quantum dots as efficient free carrier deep traps”, physica status solidi (c), 2003, pp. 1556-1559.
Turchinovich, D., Pierz, K., Uhd Jepsen, P.: InAs/GaAs quantum dots as efficient free carrier deep traps. physica status solidi (c). 1556-1559 (2003).
Turchinovich, Dmitry, Pierz, K., and Uhd Jepsen, P. “InAs/GaAs quantum dots as efficient free carrier deep traps”. physica status solidi (c) 5 (2003): 1556-1559.
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