Influence of ionizing dopants on charge transport in organic semiconductors
Abate A, Staff DR, Hollman DJ, Snaith HJ, Walker AB (2014)
Phys. Chem. Chem. Phys. 16(3): 1132-1138.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Abate, AntonioUniBi ;
Staff, Daniel R.;
Hollman, Derek J.;
Snaith, Henry J.;
Walker, Alison B.
Einrichtung
Abstract / Bemerkung
Ionizing chemical dopants are widely used in organic semiconductors to enhance the charge transport properties by increasing the number of mobile charge carriers. However, together with mobile charges, chemical doping produces anion–cation pairs in the organic matrix. In this work we use experimental and computational analysis to study the influence of these ionic species on the charge transport. We show that the anion–cation pairs introduced upon doping have a detrimental, doping-level dependent effect on charge mobility. For doping levels of 0.02–0.05% molar ratio with respect to the molecular organic semiconductor, the increase in conductivity from the extra mobile charges is partially cancelled by a reduction in charge mobility from traps introduced by the anion–cation pairs. As the doping concentration increases, anion–cation pairs start to overlap, resulting in a comparatively smoother potential landscape, which increases the charge mobility to values closer to the undoped semiconductor. This result has a significant, practical impact, as it shows the need to dope at or slightly above a threshold level, which depends on the specific host-dopant combination.
Erscheinungsjahr
2014
Zeitschriftentitel
Phys. Chem. Chem. Phys.
Band
16
Ausgabe
3
Seite(n)
1132-1138
ISSN
1463-9076
eISSN
1463-9084
Page URI
https://pub.uni-bielefeld.de/record/2978907
Zitieren
Abate A, Staff DR, Hollman DJ, Snaith HJ, Walker AB. Influence of ionizing dopants on charge transport in organic semiconductors. Phys. Chem. Chem. Phys. 2014;16(3):1132-1138.
Abate, A., Staff, D. R., Hollman, D. J., Snaith, H. J., & Walker, A. B. (2014). Influence of ionizing dopants on charge transport in organic semiconductors. Phys. Chem. Chem. Phys., 16(3), 1132-1138. https://doi.org/10.1039/C3CP53834F
Abate, Antonio, Staff, Daniel R., Hollman, Derek J., Snaith, Henry J., and Walker, Alison B. 2014. “Influence of ionizing dopants on charge transport in organic semiconductors”. Phys. Chem. Chem. Phys. 16 (3): 1132-1138.
Abate, A., Staff, D. R., Hollman, D. J., Snaith, H. J., and Walker, A. B. (2014). Influence of ionizing dopants on charge transport in organic semiconductors. Phys. Chem. Chem. Phys. 16, 1132-1138.
Abate, A., et al., 2014. Influence of ionizing dopants on charge transport in organic semiconductors. Phys. Chem. Chem. Phys., 16(3), p 1132-1138.
A. Abate, et al., “Influence of ionizing dopants on charge transport in organic semiconductors”, Phys. Chem. Chem. Phys., vol. 16, 2014, pp. 1132-1138.
Abate, A., Staff, D.R., Hollman, D.J., Snaith, H.J., Walker, A.B.: Influence of ionizing dopants on charge transport in organic semiconductors. Phys. Chem. Chem. Phys. 16, 1132-1138 (2014).
Abate, Antonio, Staff, Daniel R., Hollman, Derek J., Snaith, Henry J., and Walker, Alison B. “Influence of ionizing dopants on charge transport in organic semiconductors”. Phys. Chem. Chem. Phys. 16.3 (2014): 1132-1138.