The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites

Phung N, Al‐Ashouri A, Meloni S, Mattoni A, Albrecht S, Unger EL, Merdasa A, Abate A (2020)
Advanced Energy Materials 10(20): 1903735.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Phung, Nga; Al‐Ashouri, Amran; Meloni, Simone; Mattoni, Alessandro; Albrecht, Steve; Unger, Eva L.; Merdasa, Aboma; Abate, AntonioUniBi
Abstract / Bemerkung
Halide perovskites are emerging as revolutionary materials for optoelectronics. Their ionic nature and the presence of mobile ionic defects within the crystal structure have a dramatic influence on the operation of thin-film devices such as solar cells, light-emitting diodes, and transistors. Thin films are often polycrystalline and it is still under debate how grain boundaries affect the migration of ions and corresponding ionic defects. Laser excitation during photoluminescence (PL) microscopy experiments leads to formation and subsequent migration of ionic defects, which affects the dynamics of charge carrier recombination. From the microscopic observation of lateral PL distribution, the change in the distribution of ionic defects over time can be inferred. Resolving the PL dynamics in time and space of single crystals and thin films with different grain sizes thus, provides crucial information about the influence of grain boundaries on the ionic defect movement. In conjunction with experimental observations, atomistic simulations show that defects are trapped at the grain boundaries, thus inhibiting their diffusion. Hence, with this study, a comprehensive picture highlighting a fundamental property of the material is provided while also setting a theoretical framework in which the interaction between grain boundaries and ionic defect migration can be understood.
Erscheinungsjahr
2020
Zeitschriftentitel
Advanced Energy Materials
Band
10
Ausgabe
20
Art.-Nr.
1903735
ISSN
1614-6832
eISSN
1614-6840
Page URI
https://pub.uni-bielefeld.de/record/2978830

Zitieren

Phung N, Al‐Ashouri A, Meloni S, et al. The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites. Advanced Energy Materials. 2020;10(20): 1903735.
Phung, N., Al‐Ashouri, A., Meloni, S., Mattoni, A., Albrecht, S., Unger, E. L., Merdasa, A., et al. (2020). The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites. Advanced Energy Materials, 10(20), 1903735. https://doi.org/10.1002/aenm.201903735
Phung, Nga, Al‐Ashouri, Amran, Meloni, Simone, Mattoni, Alessandro, Albrecht, Steve, Unger, Eva L., Merdasa, Aboma, and Abate, Antonio. 2020. “The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites”. Advanced Energy Materials 10 (20): 1903735.
Phung, N., Al‐Ashouri, A., Meloni, S., Mattoni, A., Albrecht, S., Unger, E. L., Merdasa, A., and Abate, A. (2020). The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites. Advanced Energy Materials 10:1903735.
Phung, N., et al., 2020. The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites. Advanced Energy Materials, 10(20): 1903735.
N. Phung, et al., “The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites”, Advanced Energy Materials, vol. 10, 2020, : 1903735.
Phung, N., Al‐Ashouri, A., Meloni, S., Mattoni, A., Albrecht, S., Unger, E.L., Merdasa, A., Abate, A.: The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites. Advanced Energy Materials. 10, : 1903735 (2020).
Phung, Nga, Al‐Ashouri, Amran, Meloni, Simone, Mattoni, Alessandro, Albrecht, Steve, Unger, Eva L., Merdasa, Aboma, and Abate, Antonio. “The Role of Grain Boundaries on Ionic Defect Migration in Metal Halide Perovskites”. Advanced Energy Materials 10.20 (2020): 1903735.
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2023-05-08T14:46:33Z
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