Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%)
Schnatmann L, Lammel M, Damm C, Levin AA, Perez N, Novikov S, Burkov A, Reith H, Nielsch K, Schierning G (2021)
Advanced Electronic Materials : 2101081.
Zeitschriftenaufsatz
| E-Veröff. vor dem Druck | Englisch
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Autor*in
Schnatmann, LauritzUniBi;
Lammel, Michaela;
Damm, Christine;
Levin, Aleksandr A.;
Perez, Nicolas;
Novikov, Sergey;
Burkov, Alexander;
Reith, Heiko;
Nielsch, Kornelius;
Schierning, GabiUniBi
Einrichtung
Abstract / Bemerkung
Cobalt monosilicide, CoSi, belongs to the new class of materials, featuring Weyl nodes in the bulk band structure, located very close to the Fermi energy. By shifting the chemical potential into these Weyl nodes using Fe-doping, quantum effects like the chiral anomaly and weak anti localization have been evidenced. However, the behavior of these effects with respect to the doping concentration is largely unexplored. Crystal structure and the electrical transport properties in single crystalline CoSi micro-ribbons with different Fe-doping are studied to identify the characteristic temperatures of electronic quantum and correlation effects. For the crystal structure analysis, transmission electron microscopy and powder X-ray diffraction analysis with a refined structural model is performed based on Le Bail fitting to analyze the lattice parameter. Hereby, the change of the lattice parameter of Co1-xFexSi is shown with increasing Fe content. In the electrical transport analysis, the occurrence of chiral anomaly and the weak anti localization effect in Fe-doped CoSi are presented. It is shown that these effect can be tailored by Fe-doping in CoSi.
Stichworte
charge density wave;
chiral anomaly;
cobalt silicide;
quantum transport
Erscheinungsjahr
2021
Zeitschriftentitel
Advanced Electronic Materials
Art.-Nr.
2101081
Urheberrecht / Lizenzen
ISSN
2199-160X
Finanzierungs-Informationen
Open-Access-Publikationskosten wurden durch die Universität Bielefeld im Rahmen des DEAL-Vertrags gefördert.
Page URI
https://pub.uni-bielefeld.de/record/2960437
Zitieren
Schnatmann L, Lammel M, Damm C, et al. Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%). Advanced Electronic Materials . 2021: 2101081.
Schnatmann, L., Lammel, M., Damm, C., Levin, A. A., Perez, N., Novikov, S., Burkov, A., et al. (2021). Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%). Advanced Electronic Materials , 2101081. https://doi.org/10.1002/aelm.202101081
Schnatmann, Lauritz, Lammel, Michaela, Damm, Christine, Levin, Aleksandr A., Perez, Nicolas, Novikov, Sergey, Burkov, Alexander, Reith, Heiko, Nielsch, Kornelius, and Schierning, Gabi. 2021. “Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%)”. Advanced Electronic Materials : 2101081.
Schnatmann, L., Lammel, M., Damm, C., Levin, A. A., Perez, N., Novikov, S., Burkov, A., Reith, H., Nielsch, K., and Schierning, G. (2021). Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%). Advanced Electronic Materials :2101081.
Schnatmann, L., et al., 2021. Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%). Advanced Electronic Materials , : 2101081.
L. Schnatmann, et al., “Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%)”, Advanced Electronic Materials , 2021, : 2101081.
Schnatmann, L., Lammel, M., Damm, C., Levin, A.A., Perez, N., Novikov, S., Burkov, A., Reith, H., Nielsch, K., Schierning, G.: Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%). Advanced Electronic Materials . : 2101081 (2021).
Schnatmann, Lauritz, Lammel, Michaela, Damm, Christine, Levin, Aleksandr A., Perez, Nicolas, Novikov, Sergey, Burkov, Alexander, Reith, Heiko, Nielsch, Kornelius, and Schierning, Gabi. “Crystal Structure Analysis and Magneto-Transport Investigation of Co1-xFexSi (with x=0% to x=20%)”. Advanced Electronic Materials (2021): 2101081.
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