Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films

Kurdi S, Zilske P, Xu XD, Frentrup M, Vickers ME, Sakuraba Y, Reiss G, Barber ZH, Koo J (2020)
JOURNAL OF APPLIED PHYSICS 127(16): 165302.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Kurdi, S.; Zilske, PhilippUniBi; Xu, X. D.; Frentrup, M.; Vickers, M. E.; Sakuraba, Y.; Reiss, GünterUniBi ; Barber, Z. H.; Koo, JungwooUniBi
Abstract / Bemerkung
Two thin film deposition routes were studied for the growth of high quality single crystalline Ru (0001) epitaxial films on c-Al2O3 substrates using radio frequency-magnetron sputtering. Such films are very important as buffer layers for the deposition of epitaxial non-collinear antiferromagnetic Mn3X films. The first route involved depositing Ru at 700 degrees C, leading to a smooth 30nm thick film. Although, high resolution x-ray diffraction revealed twinned Ru film orientations, in situ post-annealing eliminated one orientation, leaving the film orientation aligned with the substrate, with no in-plane lattice rotation and a large lattice mismatch (13.6%). The second route involved the deposition of Ru at room temperature followed by in situ post-annealing at 700 degrees C. Transmission electron microscopy confirmed a very high quality of these films, free of crystal twinning, and a 30 degrees in-plane lattice rotation relative to the substrate, resulting in a small in-plane lattice mismatch of -1.6%. X-ray reflectivity demonstrated smooth surfaces for films down to 7nm thickness. 30nm thick high quality single-crystalline Mn3Ga and Mn3Sn films were grown on top of the Ru buffer deposited using the second route as a first step to realize Mn3X films for antiferromagnetic spintronics applications. Published under license by AIP Publishing.
Erscheinungsjahr
2020
Zeitschriftentitel
JOURNAL OF APPLIED PHYSICS
Band
127
Ausgabe
16
Art.-Nr.
165302
ISSN
0021-8979
eISSN
1089-7550
Page URI
https://pub.uni-bielefeld.de/record/2943590

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Kurdi S, Zilske P, Xu XD, et al. Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films. JOURNAL OF APPLIED PHYSICS. 2020;127(16): 165302.
Kurdi, S., Zilske, P., Xu, X. D., Frentrup, M., Vickers, M. E., Sakuraba, Y., Reiss, G., et al. (2020). Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films. JOURNAL OF APPLIED PHYSICS, 127(16), 165302. doi:10.1063/1.5140464
Kurdi, S., Zilske, P., Xu, X. D., Frentrup, M., Vickers, M. E., Sakuraba, Y., Reiss, G., Barber, Z. H., and Koo, J. (2020). Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films. JOURNAL OF APPLIED PHYSICS 127:165302.
Kurdi, S., et al., 2020. Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films. JOURNAL OF APPLIED PHYSICS, 127(16): 165302.
S. Kurdi, et al., “Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films”, JOURNAL OF APPLIED PHYSICS, vol. 127, 2020, : 165302.
Kurdi, S., Zilske, P., Xu, X.D., Frentrup, M., Vickers, M.E., Sakuraba, Y., Reiss, G., Barber, Z.H., Koo, J.: Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films. JOURNAL OF APPLIED PHYSICS. 127, : 165302 (2020).
Kurdi, S., Zilske, Philipp, Xu, X. D., Frentrup, M., Vickers, M. E., Sakuraba, Y., Reiss, Günter, Barber, Z. H., and Koo, Jungwoo. “Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films”. JOURNAL OF APPLIED PHYSICS 127.16 (2020): 165302.