Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes

Schröder C, Heiland W, Held R, Loose W (1998)
Applied Physics Letters 68(14): 1957-1959.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Schröder, ChristianUniBi ; Heiland, W.; Held, R.; Loose, W.
Erscheinungsjahr
1998
Zeitschriftentitel
Applied Physics Letters
Band
68
Ausgabe
14
Seite(n)
1957-1959
ISSN
0003-6951
eISSN
1077-3118
Page URI
https://pub.uni-bielefeld.de/record/2939794

Zitieren

Schröder C, Heiland W, Held R, Loose W. Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes. Applied Physics Letters. 1998;68(14):1957-1959.
Schröder, C., Heiland, W., Held, R., & Loose, W. (1998). Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes. Applied Physics Letters, 68(14), 1957-1959. doi:10.1063/1.115638
Schröder, C., Heiland, W., Held, R., and Loose, W. (1998). Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes. Applied Physics Letters 68, 1957-1959.
Schröder, C., et al., 1998. Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes. Applied Physics Letters, 68(14), p 1957-1959.
C. Schröder, et al., “Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes”, Applied Physics Letters, vol. 68, 1998, pp. 1957-1959.
Schröder, C., Heiland, W., Held, R., Loose, W.: Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes. Applied Physics Letters. 68, 1957-1959 (1998).
Schröder, Christian, Heiland, W., Held, R., and Loose, W. “Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes”. Applied Physics Letters 68.14 (1998): 1957-1959.

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