Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias

Manos O, Bougiatioti P, Dyck D, Huebner T, Rott K, Schmalhorst J-M, Reiss G (2019)
JOURNAL OF APPLIED PHYSICS 125(2): 023905.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
Abstract / Bemerkung
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of the soft ferromagnetic electrode, and the Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta(x)/CoFeB/MgO(y)/CoFeB(z)/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6 kA/m for x = 0.3 nm. For stacks with z = 1.05 nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with x = 0.4 nm, y = 2 nm, and z = 1.20 nm, the exchange bias presents a significant decrease at post-annealing temperature T-ann = 330 degrees C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at T-ann = 340 degrees C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of 65.5% after being annealed at T-ann = 300 degrees C for 60 min, with a significant reduction down to 10% for higher annealing temperatures (T-ann >= 330 degrees C) and down to 14% for longer annealing times (T-ann = 300 degrees C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode. Published under license by AIP Publishing.
Erscheinungsjahr
Zeitschriftentitel
JOURNAL OF APPLIED PHYSICS
Band
125
Ausgabe
2
Art.-Nr.
023905
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Manos O, Bougiatioti P, Dyck D, et al. Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias. JOURNAL OF APPLIED PHYSICS. 2019;125(2): 023905.
Manos, O., Bougiatioti, P., Dyck, D., Huebner, T., Rott, K., Schmalhorst, J. - M., & Reiss, G. (2019). Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias. JOURNAL OF APPLIED PHYSICS, 125(2), 023905. doi:10.1063/1.5062847
Manos, O., Bougiatioti, P., Dyck, D., Huebner, T., Rott, K., Schmalhorst, J. - M., and Reiss, G. (2019). Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias. JOURNAL OF APPLIED PHYSICS 125:023905.
Manos, O., et al., 2019. Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias. JOURNAL OF APPLIED PHYSICS, 125(2): 023905.
O. Manos, et al., “Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias”, JOURNAL OF APPLIED PHYSICS, vol. 125, 2019, : 023905.
Manos, O., Bougiatioti, P., Dyck, D., Huebner, T., Rott, K., Schmalhorst, J.-M., Reiss, G.: Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias. JOURNAL OF APPLIED PHYSICS. 125, : 023905 (2019).
Manos, Orestis, Bougiatioti, Panagiota, Dyck, Denis, Huebner, Torsten, Rott, Karsten, Schmalhorst, Jan-Michael, and Reiss, Günter. “Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias”. JOURNAL OF APPLIED PHYSICS 125.2 (2019): 023905.