Mimicking biological neurons with a nanoscale ferroelectric transistor
Mulaosmanovic H, Chicca E, Bertele M, Mikolajick T, Slesazeck S (2018)
Nanoscale 10(46): 21755-21763.
Zeitschriftenaufsatz
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Autor*in
Mulaosmanovic, Halid;
Chicca, ElisabettaUniBi 
;
Bertele, MartinUniBi;
Mikolajick, Thomas;
Slesazeck, Stefan
;
Bertele, MartinUniBi;
Mikolajick, Thomas;
Slesazeck, StefanEinrichtung
Erscheinungsjahr
2018
Zeitschriftentitel
Nanoscale
Band
10
Ausgabe
46
Seite(n)
21755-21763
ISSN
2040-3364
eISSN
2040-3372
Page URI
https://pub.uni-bielefeld.de/record/2932091
Zitieren
Mulaosmanovic H, Chicca E, Bertele M, Mikolajick T, Slesazeck S. Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale. 2018;10(46):21755-21763.
Mulaosmanovic, H., Chicca, E., Bertele, M., Mikolajick, T., & Slesazeck, S. (2018). Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale, 10(46), 21755-21763. doi:10.1039/c8nr07135g
Mulaosmanovic, Halid, Chicca, Elisabetta, Bertele, Martin, Mikolajick, Thomas, and Slesazeck, Stefan. 2018. “Mimicking biological neurons with a nanoscale ferroelectric transistor”. Nanoscale 10 (46): 21755-21763.
Mulaosmanovic, H., Chicca, E., Bertele, M., Mikolajick, T., and Slesazeck, S. (2018). Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale 10, 21755-21763.
Mulaosmanovic, H., et al., 2018. Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale, 10(46), p 21755-21763.
H. Mulaosmanovic, et al., “Mimicking biological neurons with a nanoscale ferroelectric transistor”, Nanoscale, vol. 10, 2018, pp. 21755-21763.
Mulaosmanovic, H., Chicca, E., Bertele, M., Mikolajick, T., Slesazeck, S.: Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale. 10, 21755-21763 (2018).
Mulaosmanovic, Halid, Chicca, Elisabetta, Bertele, Martin, Mikolajick, Thomas, and Slesazeck, Stefan. “Mimicking biological neurons with a nanoscale ferroelectric transistor”. Nanoscale 10.46 (2018): 21755-21763.
1 Zitation in Europe PMC
Daten bereitgestellt von Europe PubMed Central.
Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.
Xiao W, Liu C, Peng Y, Zheng S, Feng Q, Zhang C, Zhang J, Hao Y, Liao M, Zhou Y., Nanoscale Res Lett 14(1), 2019
PMID: 31350697
Xiao W, Liu C, Peng Y, Zheng S, Feng Q, Zhang C, Zhang J, Hao Y, Liao M, Zhou Y., Nanoscale Res Lett 14(1), 2019
PMID: 31350697
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