PUB - Publikationen an der Universität Bielefeld

We investigated the structural, magnetic, and electrical properties of the perpendicularly magnetized Mn4-xFexGe thin films (0.3 <= x <= 1). The tetragonally distorted structure was verified for all investigated stoichiometries. High coercive fields in the range of 1.61 T to 3.64 T at room temperature were measured and showed increasing behavior with decreasing Fe content. The magnetic moments range from (0.16 +/- 0.02) mu(beta/)f.u for Mn3Fe1Ge to (0.08 +/- 0.01) mu beta/f.u for Mn3.4Fe0.6Ge. X-ray absorption spectroscopy revealed ferromagnetic coupling of the Mn and Fe atoms in Mn4-xFexGe and the ferrimagnetic ordering of the Mn magnetic moments. Anomalous Hall effect measurements showed sharp magnetization switching. The resistivity values are in the range of 207 mu Omega cm to 457 mu Omega cm depending on the stoichiometry. From the contribution of the ordinary Hall effect in the anomalous Hall effect measurements, Hall constants, the charge carrier density, and mobility were deduced. The thermal conductivity was calculated using the Wiedemann-Franz law. All these values are strongly influenced by the stoichiometry. An alternative method was introduced for the determination of perpendicular magnetic anisotropy. The values range between 0.26 MJ/m(3) and 0.36 MJ/m(3). Published by AIP Publishing.