Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures
Bommanaboyena SP, Meinert M (2017)
APPLIED PHYSICS LETTERS 111(4): 042407.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Bommanaboyena, S. P.;
Meinert, MarkusUniBi ![](https://pub.uni-bielefeld.de/images/icon_orcid.png)
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Abstract / Bemerkung
By submonolayer insertion of Au, Pt, or Pd into Ta/CoFeB/MgO/Ta heterostructures, we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the spin Hall switching current density and its dependence on the external magnetic field. Despite a rather small effective spin Hall angle of theta(SH) approximate to -0.07, we obtain switching current densities as low as 2 x 10(10) A/m(2) with a 2 angstrom Au interlayer. We find that the Dzyaloshinskii-Moriya interaction parameter D is reduced with Au or Pd interlayers, and the perpendicular anisotropy field is reduced by an order of magnitude with the Pd interlayer. The dependence of the switching current density on the current pulse width is quantitatively explained with a domain wall nucleation and propagation model. Interface engineering is thus found to be a suitable route to tailor the current-induced magnetization switching properties of magnetic heterostructures. Published by AIP Publishing.
Erscheinungsjahr
2017
Zeitschriftentitel
APPLIED PHYSICS LETTERS
Band
111
Ausgabe
4
Art.-Nr.
042407
ISSN
0003-6951
eISSN
1077-3118
Page URI
https://pub.uni-bielefeld.de/record/2916508
Zitieren
Bommanaboyena SP, Meinert M. Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures. APPLIED PHYSICS LETTERS. 2017;111(4): 042407.
Bommanaboyena, S. P., & Meinert, M. (2017). Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures. APPLIED PHYSICS LETTERS, 111(4), 042407. doi:10.1063/1.4995989
Bommanaboyena, S. P., and Meinert, Markus. 2017. “Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures”. APPLIED PHYSICS LETTERS 111 (4): 042407.
Bommanaboyena, S. P., and Meinert, M. (2017). Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures. APPLIED PHYSICS LETTERS 111:042407.
Bommanaboyena, S.P., & Meinert, M., 2017. Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures. APPLIED PHYSICS LETTERS, 111(4): 042407.
S.P. Bommanaboyena and M. Meinert, “Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures”, APPLIED PHYSICS LETTERS, vol. 111, 2017, : 042407.
Bommanaboyena, S.P., Meinert, M.: Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures. APPLIED PHYSICS LETTERS. 111, : 042407 (2017).
Bommanaboyena, S. P., and Meinert, Markus. “Tuning the perpendicular magnetic anisotropy, spin Hall switching current density, and domain wall velocity by submonolayer insertion in Ta/CoFeB/MgO heterostructures”. APPLIED PHYSICS LETTERS 111.4 (2017): 042407.
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