Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment

Huckfeldt H, Gaul A, Müglich ND, Holzinger D, Nissen D, Albrecht M, Emmrich D, Beyer A, Gölzhäuser A, Ehresmann A (2017)
JOURNAL OF PHYSICS-CONDENSED MATTER 29(12): 125801.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Huckfeldt, Henning; Gaul, Alexander; Müglich, Nicolas David; Holzinger, Dennis; Nissen, Dennis; Albrecht, Manfred; Emmrich, DanielUniBi; Beyer, AndréUniBi ; Gölzhäuser, ArminUniBi ; Ehresmann, Arno
Abstract / Bemerkung
The magnetic modification of exchange bias materials by 'ion bombardment induced magnetic patterning' has been established more than a decade ago. To understand these experimental findings several theoretical models were introduced. Few investigations, however, did focus on magnetic property modifications caused by effects of ion bombardment in the ferromagnetic layer. In the present study, the structural changes occurring under ion bombardment were investigated by Monte-Carlo simulations and in experiments. A strong reduction of the saturation magnetization scaling linearly with increasing ion doses is observed and our findings suggest that it is correlated to the swelling of the layer material based on helium implantation and vacancy creation.
Stichworte
thin films; exchange bias; ion bombardment; SRIM; saturation; magnetization
Erscheinungsjahr
2017
Zeitschriftentitel
JOURNAL OF PHYSICS-CONDENSED MATTER
Band
29
Ausgabe
12
Art.-Nr.
125801
ISSN
0953-8984
eISSN
1361-648X
Page URI
https://pub.uni-bielefeld.de/record/2910492

Zitieren

Huckfeldt H, Gaul A, Müglich ND, et al. Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment. JOURNAL OF PHYSICS-CONDENSED MATTER. 2017;29(12): 125801.
Huckfeldt, H., Gaul, A., Müglich, N. D., Holzinger, D., Nissen, D., Albrecht, M., Emmrich, D., et al. (2017). Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment. JOURNAL OF PHYSICS-CONDENSED MATTER, 29(12), 125801. doi:10.1088/1361-648X/aa5ad5
Huckfeldt, H., Gaul, A., Müglich, N. D., Holzinger, D., Nissen, D., Albrecht, M., Emmrich, D., Beyer, A., Gölzhäuser, A., and Ehresmann, A. (2017). Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment. JOURNAL OF PHYSICS-CONDENSED MATTER 29:125801.
Huckfeldt, H., et al., 2017. Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment. JOURNAL OF PHYSICS-CONDENSED MATTER, 29(12): 125801.
H. Huckfeldt, et al., “Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment”, JOURNAL OF PHYSICS-CONDENSED MATTER, vol. 29, 2017, : 125801.
Huckfeldt, H., Gaul, A., Müglich, N.D., Holzinger, D., Nissen, D., Albrecht, M., Emmrich, D., Beyer, A., Gölzhäuser, A., Ehresmann, A.: Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment. JOURNAL OF PHYSICS-CONDENSED MATTER. 29, : 125801 (2017).
Huckfeldt, Henning, Gaul, Alexander, Müglich, Nicolas David, Holzinger, Dennis, Nissen, Dennis, Albrecht, Manfred, Emmrich, Daniel, Beyer, André, Gölzhäuser, Armin, and Ehresmann, Arno. “Modification of the saturation magnetization of exchange bias thin film systems upon light-ion bombardment”. JOURNAL OF PHYSICS-CONDENSED MATTER 29.12 (2017): 125801.

2 Zitationen in Europe PMC

Daten bereitgestellt von Europe PubMed Central.

Magnetic properties of artificially designed magnetic stray field landscapes in laterally confined exchange-bias layers.
Mitin D, Kovacs A, Schrefl T, Ehresmann A, Holzinger D, Albrecht M., Nanotechnology 29(35), 2018
PMID: 29882748
Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films.
Gaul A, Emmrich D, Ueltzhöffer T, Huckfeldt H, Doğanay H, Hackl J, Khan MI, Gottlob DM, Hartmann G, Beyer A, Holzinger D, Nemšák S, Schneider CM, Gölzhäuser A, Reiss G, Ehresmann A., Beilstein J Nanotechnol 9(), 2018
PMID: 30591845

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