Tunnel junction based memristors as artificial synapses
Thomas A, Niehörster S, Fabretti S, Shepheard N, Kuschel O, Küpper K, Wollschläger J, Krzysteczko P, Chicca E (2015)
Frontiers in Neuroscience 9: 241.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Thomas, AndyUniBi 
;
Niehörster, StefanUniBi;
Fabretti, SavioUniBi ;
Shepheard, NormanUniBi;
Kuschel, Olga;
Küpper, Karsten;
Wollschläger, Joachim;
Krzysteczko, PatrykUniBi;
Chicca, ElisabettaUniBi
;
Niehörster, StefanUniBi;
Fabretti, SavioUniBi ;
Shepheard, NormanUniBi;
Kuschel, Olga;
Küpper, Karsten;
Wollschläger, Joachim;
Krzysteczko, PatrykUniBi;
Chicca, ElisabettaUniBi Einrichtung
Abstract / Bemerkung
We prepared magnesia, tantalum oxide and barium titanate based junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of longterm potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices towards their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.
Stichworte
neuromorphic systems;
synaptic plasticity;
tunnel junction;
Memristors;
artificial synapses
Erscheinungsjahr
2015
Zeitschriftentitel
Frontiers in Neuroscience
Band
9
Art.-Nr.
241
ISSN
1662-453X
Finanzierungs-Informationen
Open-Access-Publikationskosten wurden durch die Deutsche Forschungsgemeinschaft und die Universität Bielefeld gefördert.
Page URI
https://pub.uni-bielefeld.de/record/2759561
Zitieren
Thomas A, Niehörster S, Fabretti S, et al. Tunnel junction based memristors as artificial synapses. Frontiers in Neuroscience. 2015;9: 241.
Thomas, A., Niehörster, S., Fabretti, S., Shepheard, N., Kuschel, O., Küpper, K., Wollschläger, J., et al. (2015). Tunnel junction based memristors as artificial synapses. Frontiers in Neuroscience, 9, 241. https://doi.org/10.3389/fnins.2015.00241
Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, and Chicca, Elisabetta. 2015. “Tunnel junction based memristors as artificial synapses”. Frontiers in Neuroscience 9: 241.
Thomas, A., Niehörster, S., Fabretti, S., Shepheard, N., Kuschel, O., Küpper, K., Wollschläger, J., Krzysteczko, P., and Chicca, E. (2015). Tunnel junction based memristors as artificial synapses. Frontiers in Neuroscience 9:241.
Thomas, A., et al., 2015. Tunnel junction based memristors as artificial synapses. Frontiers in Neuroscience, 9: 241.
A. Thomas, et al., “Tunnel junction based memristors as artificial synapses”, Frontiers in Neuroscience, vol. 9, 2015, : 241.
Thomas, A., Niehörster, S., Fabretti, S., Shepheard, N., Kuschel, O., Küpper, K., Wollschläger, J., Krzysteczko, P., Chicca, E.: Tunnel junction based memristors as artificial synapses. Frontiers in Neuroscience. 9, : 241 (2015).
Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, and Chicca, Elisabetta. “Tunnel junction based memristors as artificial synapses”. Frontiers in Neuroscience 9 (2015): 241.
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