Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

Schukfeh MI, Storm K, Hansen A, Thelander C, Hinze P, Beyer A, Weimann T, Samuelson L, Tornow M (2014)
Nanotechnology 25(46): 465306.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Schukfeh, M. I.; Storm, K.; Hansen, A.; Thelander, C.; Hinze, P.; Beyer, AndréUniBi ; Weimann, T.; Samuelson, L.; Tornow, M.
Abstract / Bemerkung
We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.
Stichworte
electrodes; InAs/InP; nanogap; dielectrophoresis; selective etching; heterostructure nanowires
Erscheinungsjahr
2014
Zeitschriftentitel
Nanotechnology
Band
25
Ausgabe
46
Art.-Nr.
465306
ISSN
0957-4484
eISSN
1361-6528
Page URI
https://pub.uni-bielefeld.de/record/2707634

Zitieren

Schukfeh MI, Storm K, Hansen A, et al. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments. Nanotechnology. 2014;25(46): 465306.
Schukfeh, M. I., Storm, K., Hansen, A., Thelander, C., Hinze, P., Beyer, A., Weimann, T., et al. (2014). Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments. Nanotechnology, 25(46), 465306. doi:10.1088/0957-4484/25/46/465306
Schukfeh, M. I., Storm, K., Hansen, A., Thelander, C., Hinze, P., Beyer, A., Weimann, T., Samuelson, L., and Tornow, M. (2014). Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments. Nanotechnology 25:465306.
Schukfeh, M.I., et al., 2014. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments. Nanotechnology, 25(46): 465306.
M.I. Schukfeh, et al., “Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments”, Nanotechnology, vol. 25, 2014, : 465306.
Schukfeh, M.I., Storm, K., Hansen, A., Thelander, C., Hinze, P., Beyer, A., Weimann, T., Samuelson, L., Tornow, M.: Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments. Nanotechnology. 25, : 465306 (2014).
Schukfeh, M. I., Storm, K., Hansen, A., Thelander, C., Hinze, P., Beyer, André, Weimann, T., Samuelson, L., and Tornow, M. “Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments”. Nanotechnology 25.46 (2014): 465306.

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