Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
Fabretti S, Zierold R, Nielsch K, Voigt C, Ronning C, Peretzki P, Seibt M, Thomas A (2014)
Applied Physics Letters 105(13): 132405.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Fabretti, SavioUniBi 
;
Zierold, Robert;
Nielsch, Kornelius;
Voigt, Carmen;
Ronning, Carsten;
Peretzki, Patrick;
Seibt, Michael;
Thomas, AndyUniBi
;
Zierold, Robert;
Nielsch, Kornelius;
Voigt, Carmen;
Ronning, Carsten;
Peretzki, Patrick;
Seibt, Michael;
Thomas, AndyUniBi Einrichtung
Erscheinungsjahr
2014
Zeitschriftentitel
Applied Physics Letters
Band
105
Ausgabe
13
Art.-Nr.
132405
ISSN
0003-6951
eISSN
1077-3118
Page URI
https://pub.uni-bielefeld.de/record/2704229
Zitieren
Fabretti S, Zierold R, Nielsch K, et al. Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters. 2014;105(13): 132405.
Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P., Seibt, M., et al. (2014). Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters, 105(13), 132405. https://doi.org/10.1063/1.4896994
Fabretti, Savio, Zierold, Robert, Nielsch, Kornelius, Voigt, Carmen, Ronning, Carsten, Peretzki, Patrick, Seibt, Michael, and Thomas, Andy. 2014. “Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions”. Applied Physics Letters 105 (13): 132405.
Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P., Seibt, M., and Thomas, A. (2014). Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters 105:132405.
Fabretti, S., et al., 2014. Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters, 105(13): 132405.
S. Fabretti, et al., “Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions”, Applied Physics Letters, vol. 105, 2014, : 132405.
Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P., Seibt, M., Thomas, A.: Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters. 105, : 132405 (2014).
Fabretti, Savio, Zierold, Robert, Nielsch, Kornelius, Voigt, Carmen, Ronning, Carsten, Peretzki, Patrick, Seibt, Michael, and Thomas, Andy. “Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions”. Applied Physics Letters 105.13 (2014): 132405.
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