Focused electron beam induced processing and the effect of substrate thickness revisited

van Dorp WF, Beyer A, Mainka M, Gölzhäuser A, Hansen TW, Wagner JB, Hagen CW, De Hosson JTM (2013)
Nanotechnology 24(34): 345301.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
van Dorp, W. F.; Beyer, AndréUniBi ; Mainka, M.; Gölzhäuser, ArminUniBi ; Hansen, T. W.; Wagner, J. B.; Hagen, C. W.; De Hosson, J. Th M.
Abstract / Bemerkung
The current understanding in the study of focused electron beam induced processing (FEBIP) is that the growth of a deposit is mainly the result of secondary electrons (SEs). This suggests that the growth rate for FEBIP is affected by the SE emission from the support. Our experiments, with membranes thinner than the SE escape depth, confirm this hypothesis. We used membranes of 1.4 and 4.3 nm amorphous carbon as supports. At the very early stage, the growth is support-dominated and the growth rate on a 4.3 nm thick membrane is three times higher than on a 1.4 nm thick membrane. This is consistent with Monte Carlo simulations for SE emission. The results suggest that SEs are dominant in the dissociation of W(CO)(6) on thin membranes. The best agreement between simulations and experiment is obtained for SEs with energies between 3 and 6 eV. With this work we revisit earlier experiments, working at a precursor pressure 20 times lower than previously. Then, despite using membranes thinner than the SE escape depth, we did not see an effect on the experimental growth rate. We explain our current results by the fact that very early in the process, the growth becomes dominated by the growing deposit itself.
Erscheinungsjahr
2013
Zeitschriftentitel
Nanotechnology
Band
24
Ausgabe
34
Art.-Nr.
345301
ISSN
0957-4484
eISSN
1361-6528
Page URI
https://pub.uni-bielefeld.de/record/2625757

Zitieren

van Dorp WF, Beyer A, Mainka M, et al. Focused electron beam induced processing and the effect of substrate thickness revisited. Nanotechnology. 2013;24(34): 345301.
van Dorp, W. F., Beyer, A., Mainka, M., Gölzhäuser, A., Hansen, T. W., Wagner, J. B., Hagen, C. W., et al. (2013). Focused electron beam induced processing and the effect of substrate thickness revisited. Nanotechnology, 24(34), 345301. doi:10.1088/0957-4484/24/34/345301
van Dorp, W. F., Beyer, André, Mainka, M., Gölzhäuser, Armin, Hansen, T. W., Wagner, J. B., Hagen, C. W., and De Hosson, J. Th M. 2013. “Focused electron beam induced processing and the effect of substrate thickness revisited”. Nanotechnology 24 (34): 345301.
van Dorp, W. F., Beyer, A., Mainka, M., Gölzhäuser, A., Hansen, T. W., Wagner, J. B., Hagen, C. W., and De Hosson, J. T. M. (2013). Focused electron beam induced processing and the effect of substrate thickness revisited. Nanotechnology 24:345301.
van Dorp, W.F., et al., 2013. Focused electron beam induced processing and the effect of substrate thickness revisited. Nanotechnology, 24(34): 345301.
W.F. van Dorp, et al., “Focused electron beam induced processing and the effect of substrate thickness revisited”, Nanotechnology, vol. 24, 2013, : 345301.
van Dorp, W.F., Beyer, A., Mainka, M., Gölzhäuser, A., Hansen, T.W., Wagner, J.B., Hagen, C.W., De Hosson, J.T.M.: Focused electron beam induced processing and the effect of substrate thickness revisited. Nanotechnology. 24, : 345301 (2013).
van Dorp, W. F., Beyer, André, Mainka, M., Gölzhäuser, Armin, Hansen, T. W., Wagner, J. B., Hagen, C. W., and De Hosson, J. Th M. “Focused electron beam induced processing and the effect of substrate thickness revisited”. Nanotechnology 24.34 (2013): 345301.

2 Zitationen in Europe PMC

Daten bereitgestellt von Europe PubMed Central.

Gas-assisted silver deposition with a focused electron beam.
Berger L, Madajska K, Szymanska IB, Höflich K, Polyakov MN, Jurczyk J, Guerra-Nuñez C, Utke I., Beilstein J Nanotechnol 9(), 2018
PMID: 29441267
Charged particle single nanometre manufacturing.
Prewett PD, Hagen CW, Lenk C, Lenk S, Kaestner M, Ivanov T, Ahmad A, Rangelow IW, Shi X, Boden SA, Robinson APG, Yang D, Hari S, Scotuzzi M, Huq E., Beilstein J Nanotechnol 9(), 2018
PMID: 30498657

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