Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier
Krumme B, Ebke D, Weis C, Makarov SI, Warland A, Hütten A, Wende H (2012)
Applied Physics Letters 101(23): 232403.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Krumme, B.;
Ebke, DanielUniBi;
Weis, C.;
Makarov, S. I.;
Warland, A.;
Hütten, AndreasUniBi;
Wende, H.
Einrichtung
Abstract / Bemerkung
We investigated the electronic structure as well as the magnetic properties of a Co2MnSi film on MgO(100) element-specifically at the interface to a MgO tunnel barrier by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. The electronic structure of the Co atoms as a function of the capping layer thickness remained unchanged, whereas the XA spectra of Mn indicate an increase of the unoccupied d states. The experimental findings are consistent with the interfacial structure proposed in the work by B. Hulsen et al. [Phys. Rev. Lett. 103, 046802 (2009)], where a MnSi layer is present at the interface to the MgO with oxygen atoms at top positions in the first MgO layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769180]
Erscheinungsjahr
2012
Zeitschriftentitel
Applied Physics Letters
Band
101
Ausgabe
23
Art.-Nr.
232403
ISSN
0003-6951
Page URI
https://pub.uni-bielefeld.de/record/2553339
Zitieren
Krumme B, Ebke D, Weis C, et al. Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters. 2012;101(23): 232403.
Krumme, B., Ebke, D., Weis, C., Makarov, S. I., Warland, A., Hütten, A., & Wende, H. (2012). Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters, 101(23), 232403. doi:10.1063/1.4769180
Krumme, B., Ebke, Daniel, Weis, C., Makarov, S. I., Warland, A., Hütten, Andreas, and Wende, H. 2012. “Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier”. Applied Physics Letters 101 (23): 232403.
Krumme, B., Ebke, D., Weis, C., Makarov, S. I., Warland, A., Hütten, A., and Wende, H. (2012). Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters 101:232403.
Krumme, B., et al., 2012. Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters, 101(23): 232403.
B. Krumme, et al., “Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier”, Applied Physics Letters, vol. 101, 2012, : 232403.
Krumme, B., Ebke, D., Weis, C., Makarov, S.I., Warland, A., Hütten, A., Wende, H.: Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters. 101, : 232403 (2012).
Krumme, B., Ebke, Daniel, Weis, C., Makarov, S. I., Warland, A., Hütten, Andreas, and Wende, H. “Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier”. Applied Physics Letters 101.23 (2012): 232403.
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