A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device
Münchenberger J, Reiss G, Thomas A (2012)
Journal of Applied Physics 111(7): 07D303.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
Download
Es wurden keine Dateien hochgeladen. Nur Publikationsnachweis!
Einrichtung
Stichworte
memristors;
giant magnetoresistance;
electron beam lithography;
etching;
nanolithography;
spin valves;
nanostructured materials;
magnetic domain walls
Erscheinungsjahr
2012
Zeitschriftentitel
Journal of Applied Physics
Band
111
Ausgabe
7
Art.-Nr.
07D303
ISSN
0021-8979
Page URI
https://pub.uni-bielefeld.de/record/2479243
Zitieren
Münchenberger J, Reiss G, Thomas A. A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics. 2012;111(7): 07D303.
Münchenberger, J., Reiss, G., & Thomas, A. (2012). A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics, 111(7), 07D303. doi:10.1063/1.3671438
Münchenberger, Jana, Reiss, Günter, and Thomas, Andy. 2012. “A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device”. Journal of Applied Physics 111 (7): 07D303.
Münchenberger, J., Reiss, G., and Thomas, A. (2012). A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics 111:07D303.
Münchenberger, J., Reiss, G., & Thomas, A., 2012. A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics, 111(7): 07D303.
J. Münchenberger, G. Reiss, and A. Thomas, “A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device”, Journal of Applied Physics, vol. 111, 2012, : 07D303.
Münchenberger, J., Reiss, G., Thomas, A.: A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics. 111, : 07D303 (2012).
Münchenberger, Jana, Reiss, Günter, and Thomas, Andy. “A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device”. Journal of Applied Physics 111.7 (2012): 07D303.
Export
Markieren/ Markierung löschen
Markierte Publikationen
Web of Science
Dieser Datensatz im Web of Science®Suchen in
Google Scholar