The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System

Krzysteczko P, Münchenberger J, Schäfers M, Reiss G, Thomas A (2012)
Advanced Materials 24(6): 762-766.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Advanced Materials
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24
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6
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762-766
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Krzysteczko P, Münchenberger J, Schäfers M, Reiss G, Thomas A. The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System. Advanced Materials. 2012;24(6):762-766.
Krzysteczko, P., Münchenberger, J., Schäfers, M., Reiss, G., & Thomas, A. (2012). The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System. Advanced Materials, 24(6), 762-766. doi:10.1002/adma.201103723
Krzysteczko, P., Münchenberger, J., Schäfers, M., Reiss, G., and Thomas, A. (2012). The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System. Advanced Materials 24, 762-766.
Krzysteczko, P., et al., 2012. The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System. Advanced Materials, 24(6), p 762-766.
P. Krzysteczko, et al., “The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System”, Advanced Materials, vol. 24, 2012, pp. 762-766.
Krzysteczko, P., Münchenberger, J., Schäfers, M., Reiss, G., Thomas, A.: The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System. Advanced Materials. 24, 762-766 (2012).
Krzysteczko, Patryk, Münchenberger, Jana, Schäfers, Markus, Reiss, Günter, and Thomas, Andy. “The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System”. Advanced Materials 24.6 (2012): 762-766.

26 Zitationen in Europe PMC

Daten bereitgestellt von Europe PubMed Central.

Nociceptive Memristor.
Kim Y, Kwon YJ, Kwon DE, Yoon KJ, Yoon JH, Yoo S, Kim HJ, Park TH, Han JW, Kim KM, Hwang CS., Adv Mater 30(8), 2018
PMID: 29318678
Mimicking Synaptic Plasticity and Neural Network Using Memtranstors.
Shen JX, Shang DS, Chai YS, Wang SG, Shen BG, Sun Y., Adv Mater 30(12), 2018
PMID: 29399893
Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.
Jeong DS, Hwang CS., Adv Mater 30(42), 2018
PMID: 29667255
An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics.
Liu J, Yang H, Ji Y, Ma Z, Chen K, Zhang X, Zhang H, Sun Y, Huang X, Oda S., Nanotechnology 29(41), 2018
PMID: 30051885
Coupling Resistive Switching Devices with Neurons: State of the Art and Perspectives.
Chiolerio A, Chiappalone M, Ariano P, Bocchini S., Front Neurosci 11(), 2017
PMID: 28261048
Probing a Device's Active Atoms.
Studniarek M, Halisdemir U, Schleicher F, Taudul B, Urbain E, Boukari S, Hervé M, Lambert CH, Hamadeh A, Petit-Watelot S, Zill O, Lacour D, Joly L, Scheurer F, Schmerber G, Da Costa V, Dixit A, Guitard PA, Acosta M, Leduc F, Choueikani F, Otero E, Wulfhekel W, Montaigne F, Monteblanco EN, Arabski J, Ohresser P, Beaurepaire E, Weber W, Alouani M, Hehn M, Bowen M., Adv Mater 29(19), 2017
PMID: 28295696
Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films.
Hu L, Fu S, Chen Y, Cao H, Liang L, Zhang H, Gao J, Wang J, Zhuge F., Adv Mater 29(24), 2017
PMID: 28397309
Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.
Dias C, Guerra LM, Bordalo BD, Lv H, Ferraria AM, Botelho do Rego AM, Cardoso S, Freitas PP, Ventura J., Phys Chem Chem Phys 19(17), 2017
PMID: 28401238
Synaptic Metaplasticity Realized in Oxide Memristive Devices.
Tan ZH, Yang R, Terabe K, Yin XB, Zhang XD, Guo X., Adv Mater 28(2), 2016
PMID: 26573772
Ag2S atomic switch-based 'tug of war' for decision making.
Lutz C, Hasegawa T, Chikyow T., Nanoscale 8(29), 2016
PMID: 27188925
Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons.
Sengupta A, Panda P, Wijesinghe P, Kim Y, Roy K., Sci Rep 6(), 2016
PMID: 27443913
Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.
Li X, Jia J, Li Y, Bai Y, Li J, Shi Y, Wang L, Xu X., Sci Rep 6(), 2016
PMID: 27585644
Spintronic Nanodevices for Bioinspired Computing.
Grollier J, Querlioz D, Stiles MD., Proc IEEE Inst Electr Electron Eng 104(10), 2016
PMID: 27881881
Neuronal synapse as a memristor: modeling pair- and triplet-based STDP rule.
Cai W, Ellinger F, Tetzlaff R., IEEE Trans Biomed Circuits Syst 9(1), 2015
PMID: 24960611
Associative memory realized by a reconfigurable memristive Hopfield neural network.
Hu SG, Liu Y, Liu Z, Chen TP, Wang JJ, Yu Q, Deng LJ, Yin Y, Hosaka S., Nat Commun 6(), 2015
PMID: 26108993
Tunnel junction based memristors as artificial synapses.
Thomas A, Niehörster S, Fabretti S, Shepheard N, Kuschel O, Küpper K, Wollschläger J, Krzysteczko P, Chicca E., Front Neurosci 9(), 2015
PMID: 26217173
Spin-torque building blocks.
Locatelli N, Cros V, Grollier J., Nat Mater 13(1), 2014
PMID: 24343514
Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.
Li Q, Shen TT, Cao YL, Zhang K, Yan SS, Tian YF, Kang SS, Zhao MW, Dai YY, Chen YX, Liu GL, Mei LM, Wang XL, Grünberg P., Sci Rep 4(), 2014
PMID: 24452305
Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.
Li Y, Zhong Y, Zhang J, Xu L, Wang Q, Sun H, Tong H, Cheng X, Miao X., Sci Rep 4(), 2014
PMID: 24809396
Multiprotocol-induced plasticity in artificial synapses.
Kornijcuk V, Kavehei O, Lim H, Seok JY, Kim SK, Kim I, Lee WS, Choi BJ, Jeong DS., Nanoscale 6(24), 2014
PMID: 25373422
Ultrafast synaptic events in a chalcogenide memristor.
Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, Miao X., Sci Rep 3(), 2013
PMID: 23563810
Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors.
Lim H, Jang HW, Lee DK, Kim I, Hwang CS, Jeong DS., Nanoscale 5(14), 2013
PMID: 23733132
Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold.
Lim H, Kim I, Kim JS, Seong Hwang C, Jeong DS., Nanotechnology 24(38), 2013
PMID: 23999153
Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch.
Hino T, Hasegawa T, Tanaka H, Tsuruoka T, Terabe K, Ogawa T, Aono M., Nanotechnology 24(38), 2013
PMID: 23999187

36 References

Daten bereitgestellt von Europe PubMed Central.


Chua, IEEE Trans. Circuit Theory 18(), 1971
The missing memristor found.
Strukov DB, Snider GS, Stewart DR, Williams RS., Nature 453(7191), 2008
PMID: 18451858
Nanoscale memristor device as synapse in neuromorphic systems.
Jo SH, Chang T, Ebong I, Bhadviya BB, Mazumder P, Lu W., Nano Lett. 10(4), 2010
PMID: 20192230

Krzysteczko, J. Magn. Magn. Mater. 321(), 2009

Krzysteczko, Appl. Phys. Lett. 95(), 2009
Nanoionics-based resistive switching memories.
Waser R, Aono M., Nat Mater 6(11), 2007
PMID: 17972938

Miao, Rep. Prog. Phys. 74(), 2011

Oh, Nat. Phys. 5(), 2009

Sun, J. Appl. Phys. 105(), 2009

Min, IEEE Trans. Magn. 46(), 2010

Zhou, Appl. Phys. Lett. 98(), 2011

Hebb, 1949
Regulation of synaptic efficacy by coincidence of postsynaptic APs and EPSPs.
Markram H, Lubke J, Frotscher M, Sakmann B., Science 275(5297), 1997
PMID: 8985014

Snider, Nanotechnology 18(), 2007
Instar and outstar learning with memristive nanodevices.
Snider G., Nanotechnology 22(1), 2010
PMID: 21135450

Janousch, Adv. Mater. 19(), 2007
The mechanism of electroforming of metal oxide memristive switches.
Joshua Yang J, Miao F, Pickett MD, Ohlberg DA, Stewart DR, Lau CN, Williams RS., Nanotechnology 20(21), 2009
PMID: 19423925

Chua, Appl. Phys. A 102(), 2011

Slonczewski, J. Magn. Magn. Mater. 159(), 1996

Katine, J. Magn. Magn. Mater. 320(), 2008

Wang, IEEE Electron Device Lett. 30(), 2009

Halley, Appl. Phys. Lett. 92(), 2008

Yoshida, Appl. Phys. Lett. 92(), 2008

Teixeira, J. Phys. D: Appl. Phys. 42(), 2009

Najjari, Phys. Rev. B 81(), 2010

Afifi, IEICE Electron. Express 6(), 2009
On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex.
Zamarreno-Ramos C, Camunas-Mesa LA, Perez-Carrasco JA, Masquelier T, Serrano-Gotarredona T, Linares-Barranco B., Front Neurosci 5(), 2011
PMID: 21442012
A synaptic model of memory: long-term potentiation in the hippocampus.
Bliss TV, Collingridge GL., Nature 361(6407), 1993
PMID: 8421494
Long-term depression properties in a simple system.
Goda Y, Stevens CF., Neuron 16(1), 1996
PMID: 8562073

Grollier, Appl. Phys. Lett. 83(), 2003
Domain wall creation in nanostructures driven by a spin-polarized current.
Ravelosona D, Mangin S, Lemaho Y, Katine JA, Terris BD, Fullerton EE., Phys. Rev. Lett. 96(18), 2006
PMID: 16712386

Aoki, Appl. Phys. Express 3(), 2010
High-density crossbar arrays based on a Si memristive system.
Jo SH, Kim KH, Lu W., Nano Lett. 9(2), 2009
PMID: 19206536
'Memristive' switches enable 'stateful' logic operations via material implication.
Borghetti J, Snider GS, Kuekes PJ, Yang JJ, Stewart DR, Williams RS., Nature 464(7290), 2010
PMID: 20376145

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