Advances in the deposition chemistry of metal-containing thin films using gas phase processes
Bahlawane N, Kohse-Höinghaus K, Premkumar PA, Lenoble D (2012)
CHEMICAL SCIENCE 3(4): 929-941.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Einrichtung
Erscheinungsjahr
2012
Zeitschriftentitel
CHEMICAL SCIENCE
Band
3
Ausgabe
4
Seite(n)
929-941
ISSN
2041-6520
eISSN
2041-6539
Page URI
https://pub.uni-bielefeld.de/record/2451435
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Bahlawane N, Kohse-Höinghaus K, Premkumar PA, Lenoble D. Advances in the deposition chemistry of metal-containing thin films using gas phase processes. CHEMICAL SCIENCE. 2012;3(4):929-941.
Bahlawane, N., Kohse-Höinghaus, K., Premkumar, P. A., & Lenoble, D. (2012). Advances in the deposition chemistry of metal-containing thin films using gas phase processes. CHEMICAL SCIENCE, 3(4), 929-941. doi:10.1039/c1sc00522g
Bahlawane, Naoufal, Kohse-Höinghaus, Katharina, Premkumar, Peter Antony, and Lenoble, Damien. 2012. “Advances in the deposition chemistry of metal-containing thin films using gas phase processes”. CHEMICAL SCIENCE 3 (4): 929-941.
Bahlawane, N., Kohse-Höinghaus, K., Premkumar, P. A., and Lenoble, D. (2012). Advances in the deposition chemistry of metal-containing thin films using gas phase processes. CHEMICAL SCIENCE 3, 929-941.
Bahlawane, N., et al., 2012. Advances in the deposition chemistry of metal-containing thin films using gas phase processes. CHEMICAL SCIENCE, 3(4), p 929-941.
N. Bahlawane, et al., “Advances in the deposition chemistry of metal-containing thin films using gas phase processes”, CHEMICAL SCIENCE, vol. 3, 2012, pp. 929-941.
Bahlawane, N., Kohse-Höinghaus, K., Premkumar, P.A., Lenoble, D.: Advances in the deposition chemistry of metal-containing thin films using gas phase processes. CHEMICAL SCIENCE. 3, 929-941 (2012).
Bahlawane, Naoufal, Kohse-Höinghaus, Katharina, Premkumar, Peter Antony, and Lenoble, Damien. “Advances in the deposition chemistry of metal-containing thin films using gas phase processes”. CHEMICAL SCIENCE 3.4 (2012): 929-941.
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