Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions

Münchenberger J, Krzysteczko P, Reiss G, Thomas A (2011)
JOURNAL OF APPLIED PHYSICS 110(9): 096105.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Abstract / Bemerkung
Since the recent successful implementation of the long-hypothesized memristor, its use in neuronal computing and in the reproduction of biological neural networks has gained increasing attention. In addition to the development of these new applications, the growing number of devices with memristive properties is promising to improve already established technologies. Herein, we use the recently reported memristance in magnesium-oxide-based magnetic tunnel junctions to improve the error tolerance in magnetic random access memory and magnetic field programmable logic arrays. (C) 2011 American Institute of Physics. [doi:10.1063/1.3660521]
Erscheinungsjahr
2011
Zeitschriftentitel
JOURNAL OF APPLIED PHYSICS
Band
110
Ausgabe
9
Seite(n)
096105
ISSN
0021-8979
Page URI
https://pub.uni-bielefeld.de/record/2450983

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Münchenberger J, Krzysteczko P, Reiss G, Thomas A. Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions. JOURNAL OF APPLIED PHYSICS. 2011;110(9):096105.
Münchenberger, J., Krzysteczko, P., Reiss, G., & Thomas, A. (2011). Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions. JOURNAL OF APPLIED PHYSICS, 110(9), 096105. doi:10.1063/1.3660521
Münchenberger, J., Krzysteczko, P., Reiss, G., and Thomas, A. (2011). Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions. JOURNAL OF APPLIED PHYSICS 110, 096105.
Münchenberger, J., et al., 2011. Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions. JOURNAL OF APPLIED PHYSICS, 110(9), p 096105.
J. Münchenberger, et al., “Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions”, JOURNAL OF APPLIED PHYSICS, vol. 110, 2011, pp. 096105.
Münchenberger, J., Krzysteczko, P., Reiss, G., Thomas, A.: Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions. JOURNAL OF APPLIED PHYSICS. 110, 096105 (2011).
Münchenberger, Jana, Krzysteczko, Patryk, Reiss, Günter, and Thomas, Andy. “Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions”. JOURNAL OF APPLIED PHYSICS 110.9 (2011): 096105.