Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy
Pfeiffer W, Deicher M, Keller R, Magerle R, Pross P, Skudlik H, Wichert T, Wolf H, Forkel D, Moriya N, Kalish R (1991)
Appl. Surf. Sci. 50(1-4): 154-158.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Pfeiffer, WalterUniBi;
Deicher, M.;
Keller, R.;
Magerle, R.;
Pross, P.;
Skudlik, H.;
Wichert, T.;
Wolf, H.;
Forkel, D.;
Moriya, N.;
Kalish, R.
Abstract / Bemerkung
Investigations of Cd-111m implanted GaAs and InP crystals using the microscopically sensitive perturbed angular correlation technique show that the implanted Cd is incorporated on unperturbed substitutional lattice sites during rapid thermal annealing at significant lower temperatures than for electrical activation is required. In GaAs the higher implantation temperature at 473 K did not show any influence on this annealing stage, whereas a higher implantation dose hinders the annealing. We conclude that not only the local environment of the implant but also the long-range lattice perfection has to be restored for the electrical activation of implants in III-V compound semiconductors.
Erscheinungsjahr
1991
Zeitschriftentitel
Appl. Surf. Sci.
Band
50
Ausgabe
1-4
Seite(n)
154-158
ISSN
0169-4332
Page URI
https://pub.uni-bielefeld.de/record/2407841
Zitieren
Pfeiffer W, Deicher M, Keller R, et al. Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy. Appl. Surf. Sci. 1991;50(1-4):154-158.
Pfeiffer, W., Deicher, M., Keller, R., Magerle, R., Pross, P., Skudlik, H., Wichert, T., et al. (1991). Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy. Appl. Surf. Sci., 50(1-4), 154-158. https://doi.org/10.1016/0169-4332(91)90155-D
Pfeiffer, Walter, Deicher, M., Keller, R., Magerle, R., Pross, P., Skudlik, H., Wichert, T., et al. 1991. “Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy”. Appl. Surf. Sci. 50 (1-4): 154-158.
Pfeiffer, W., Deicher, M., Keller, R., Magerle, R., Pross, P., Skudlik, H., Wichert, T., Wolf, H., Forkel, D., Moriya, N., et al. (1991). Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy. Appl. Surf. Sci. 50, 154-158.
Pfeiffer, W., et al., 1991. Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy. Appl. Surf. Sci., 50(1-4), p 154-158.
W. Pfeiffer, et al., “Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy”, Appl. Surf. Sci., vol. 50, 1991, pp. 154-158.
Pfeiffer, W., Deicher, M., Keller, R., Magerle, R., Pross, P., Skudlik, H., Wichert, T., Wolf, H., Forkel, D., Moriya, N., Kalish, R.: Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy. Appl. Surf. Sci. 50, 154-158 (1991).
Pfeiffer, Walter, Deicher, M., Keller, R., Magerle, R., Pross, P., Skudlik, H., Wichert, T., Wolf, H., Forkel, D., Moriya, N., and Kalish, R. “Characterization of Cd Implanted and Annealed GaAS and InP by Perturbed Angular Correlation (PAC) Spectroscopy”. Appl. Surf. Sci. 50.1-4 (1991): 154-158.
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