Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Wichert T (1992)
Nucl. Instrum. Methods B 63(1-2): 205-208.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
Download
Es wurden keine Dateien hochgeladen. Nur Publikationsnachweis!
Autor*in
Skudlik, H.;
Deicher, M.;
Keller, R.;
Magerle, R.;
Pfeiffer, WalterUniBi;
Pross, P.;
Wichert, T.
Abstract / Bemerkung
PAC measurements at In-111, yielding information on the amount of formed In-H pairs. and four point resistivity measurements were combined to study the correlation between pair formation and electrical deactivation of acceptors in p-Si samples during passivation with H and thermal reactivation. Passivation was performed by means of low energy (200 eV) H+ implantation which proved to be quite efficient at 400 K. A complete passivation of the in profile with a peak concentration of 10(18) cm-3 could be achieved. The results show, that the deactivation and reactivation of the In acceptors quantitatively coincide with the formation and dissociation of In-H pairs.
Erscheinungsjahr
1992
Zeitschriftentitel
Nucl. Instrum. Methods B
Band
63
Ausgabe
1-2
Seite(n)
205-208
ISSN
0168-583X
Page URI
https://pub.uni-bielefeld.de/record/2407824
Zitieren
Skudlik H, Deicher M, Keller R, et al. Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B. 1992;63(1-2):205-208.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., & Wichert, T. (1992). Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B, 63(1-2), 205-208. https://doi.org/10.1016/0168-583X(92)95196-X
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., and Wichert, T. 1992. “Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study”. Nucl. Instrum. Methods B 63 (1-2): 205-208.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., and Wichert, T. (1992). Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B 63, 205-208.
Skudlik, H., et al., 1992. Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B, 63(1-2), p 205-208.
H. Skudlik, et al., “Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study”, Nucl. Instrum. Methods B, vol. 63, 1992, pp. 205-208.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Wichert, T.: Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B. 63, 205-208 (1992).
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., and Wichert, T. “Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study”. Nucl. Instrum. Methods B 63.1-2 (1992): 205-208.
Export
Markieren/ Markierung löschen
Markierte Publikationen
Web of Science
Dieser Datensatz im Web of Science®Suchen in
Google Scholar