Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T (1992)
Phys. Rev. B 46(4): 2172-2182.
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Autor*in
Skudlik, H.;
Deicher, M.;
Keller, R.;
Magerle, R.;
Pfeiffer, WalterUniBi;
Pross, P.;
Recknagel, E.;
Wichert, T.
Abstract / Bemerkung
With the radioactive probe atom In-111 as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-gamma-gamma-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.
Erscheinungsjahr
1992
Zeitschriftentitel
Phys. Rev. B
Band
46
Ausgabe
4
Seite(n)
2172-2182
ISSN
0163-1829
eISSN
1095-3795
Page URI
https://pub.uni-bielefeld.de/record/2407806
Zitieren
Skudlik H, Deicher M, Keller R, et al. Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B. 1992;46(4):2172-2182.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., et al. (1992). Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B, 46(4), 2172-2182. https://doi.org/10.1103/PhysRevB.46.2172
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., Recknagel, E., and Wichert, T. 1992. “Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique”. Phys. Rev. B 46 (4): 2172-2182.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., and Wichert, T. (1992). Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B 46, 2172-2182.
Skudlik, H., et al., 1992. Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B, 46(4), p 2172-2182.
H. Skudlik, et al., “Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique”, Phys. Rev. B, vol. 46, 1992, pp. 2172-2182.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., Wichert, T.: Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B. 46, 2172-2182 (1992).
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., Recknagel, E., and Wichert, T. “Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique”. Phys. Rev. B 46.4 (1992): 2172-2182.
Daten bereitgestellt von European Bioinformatics Institute (EBI)
1 Zitation in Europe PMC
Daten bereitgestellt von Europe PubMed Central.
Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys Rev B Condens Matter 46(4), 1992
PMID: 10003892
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys Rev B Condens Matter 46(4), 1992
PMID: 10003892
48 References
Daten bereitgestellt von Europe PubMed Central.
AUTHOR UNKNOWN, 1986
AUTHOR UNKNOWN, 0
AUTHOR UNKNOWN, 1990
AUTHOR UNKNOWN, 1988
AUTHOR UNKNOWN, phys rev lett 55(), 1986
AUTHOR UNKNOWN, 1989
AUTHOR UNKNOWN, ieee trans electron dev ed 24(), 1977
AUTHOR UNKNOWN, 1990
Hydrogen localization near boron in silicon
Pankove, Applied Physics Letters 46(4), 1985
Pankove, Applied Physics Letters 46(4), 1985
Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen
Thewalt, Applied Physics Letters 46(7), 1985
Thewalt, Applied Physics Letters 46(7), 1985
Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon
Tavendale, Applied Physics Letters 47(3), 1985
Tavendale, Applied Physics Letters 47(3), 1985
Vibrational characteristics of acceptor-hydrogen complexes in silicon
Stavola, Applied Physics Letters 50(16), 1987
Stavola, Applied Physics Letters 50(16), 1987
Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon
Johnson, Applied Physics Letters 46(8), 1985
Johnson, Applied Physics Letters 46(8), 1985
Atomic deuterium passivation of boron acceptor levels in silicon crystals
Mikkelsen, Applied Physics Letters 46(9), 1985
Mikkelsen, Applied Physics Letters 46(9), 1985
Hydrogen injection and neutralization of boron acceptors in silicon boiled in water
Tavendale, Applied Physics Letters 48(9), 1986
Tavendale, Applied Physics Letters 48(9), 1986
Effect of hydrogen on shallow dopants in crystalline silicon
Pantelides, Applied Physics Letters 50(15), 1987
Pantelides, Applied Physics Letters 50(15), 1987
Microscopic structure of the hydrogen-boron complex in crystalline silicon.
Denteneer PJ, Van de Walle CG , Pantelides ST., Phys. Rev., B Condens. Matter 39(15), 1989
PMID: 9947890
Denteneer PJ, Van de Walle CG , Pantelides ST., Phys. Rev., B Condens. Matter 39(15), 1989
PMID: 9947890
Hydrogen-acceptor pairs in silicon.
DeLeo GG, Fowler WB., Phys. Rev. Lett. 56(4), 1986
PMID: 10033181
DeLeo GG, Fowler WB., Phys. Rev. Lett. 56(4), 1986
PMID: 10033181
Passivation of shallow acceptors by H in Si: A microscopic study by perturbed angular correlations.
Wichert T, Skudlik H, Deicher M, Grubel G, Keller R, Recknagel E, Song aL., Phys. Rev. Lett. 59(18), 1987
PMID: 10035414
Wichert T, Skudlik H, Deicher M, Grubel G, Keller R, Recknagel E, Song aL., Phys. Rev. Lett. 59(18), 1987
PMID: 10035414
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
Chang KJ, Chadi DJ., Phys. Rev. Lett. 60(14), 1988
PMID: 10038034
Chang KJ, Chadi DJ., Phys. Rev. Lett. 60(14), 1988
PMID: 10038034
Lattice location of deuterium interacting with the boron acceptor in silicon.
Bech Nielsen B , Andersen JU, Pearton SJ., Phys. Rev. Lett. 60(4), 1988
PMID: 10038512
Bech Nielsen B , Andersen JU, Pearton SJ., Phys. Rev. Lett. 60(4), 1988
PMID: 10038512
Copper in silicon.
Keller R, Deicher M, Pfeiffer W, Skudlik H, Steiner D, Wichert T., Phys. Rev. Lett. 65(16), 1990
PMID: 10042427
Keller R, Deicher M, Pfeiffer W, Skudlik H, Steiner D, Wichert T., Phys. Rev. Lett. 65(16), 1990
PMID: 10042427
Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon.
Johnson NM., Phys. Rev., B Condens. Matter 31(8), 1985
PMID: 9936537
Johnson NM., Phys. Rev., B Condens. Matter 31(8), 1985
PMID: 9936537
Hydrogen passivation of boron acceptors in silicon: Raman studies.
Stutzmann M., Phys. Rev., B Condens. Matter 35(11), 1987
PMID: 9940818
Stutzmann M., Phys. Rev., B Condens. Matter 35(11), 1987
PMID: 9940818
Bonding or antibonding position of hydrogen in silicon.
Baranowski JM, Tatarkiewicz J., Phys. Rev., B Condens. Matter 35(14), 1987
PMID: 9941047
Baranowski JM, Tatarkiewicz J., Phys. Rev., B Condens. Matter 35(14), 1987
PMID: 9941047
Hydrogen passivation of shallow acceptors in c-Si: An ab initio approach.
Amore Bonapasta A , Lapiccirella A, Tomassini N, Capizzi M., Phys. Rev., B Condens. Matter 36(11), 1987
PMID: 9942325
Amore Bonapasta A , Lapiccirella A, Tomassini N, Capizzi M., Phys. Rev., B Condens. Matter 36(11), 1987
PMID: 9942325
Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations.
Stavola M, Pearton SJ, Lopata J, Dautremont-Smith WC., Phys. Rev., B Condens. Matter 37(14), 1988
PMID: 9944168
Stavola M, Pearton SJ, Lopata J, Dautremont-Smith WC., Phys. Rev., B Condens. Matter 37(14), 1988
PMID: 9944168
Dissociation energies of shallow-acceptor-hydrogen pairs in silicon.
Zundel T, Weber J., Phys. Rev., B Condens. Matter 39(18), 1989
PMID: 9948267
Zundel T, Weber J., Phys. Rev., B Condens. Matter 39(18), 1989
PMID: 9948267
Hydrogen passivation of shallow acceptors and donors in c-Si: Comparisons and trends.
Estreicher SK, Throckmorton L, Marynick DS., Phys. Rev., B Condens. Matter 39(18), 1989
PMID: 9948225
Estreicher SK, Throckmorton L, Marynick DS., Phys. Rev., B Condens. Matter 39(18), 1989
PMID: 9948225
Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys. Rev., B Condens. Matter 46(4), 1992
PMID: 10003892
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys. Rev., B Condens. Matter 46(4), 1992
PMID: 10003892
Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
Pankove, Physical Review Letters 51(24), 1983
Pankove, Physical Review Letters 51(24), 1983
On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon
RIZK, Physica B Condensed Matter 170(1-4), 1991
RIZK, Physica B Condensed Matter 170(1-4), 1991
Investigation of cadmium-hydrogen complexes in silicon
GEBHARD, Physica B Condensed Matter 170(1-4), 1991
GEBHARD, Physica B Condensed Matter 170(1-4), 1991
Unintentional hydrogen incorporation in crystals
CLERJAUD, Physica B Condensed Matter 170(1-4), 1991
CLERJAUD, Physica B Condensed Matter 170(1-4), 1991
Experimental evidence for boron-hydrogen interaction in boron-doped silicon passivated with hydrogen
PAJOT, Solid State Communications 67(9), 1988
PAJOT, Solid State Communications 67(9), 1988
Atomic configuration of H-based complexes in silicon
Artacho, Solid State Communications 72(4), 1989
Artacho, Solid State Communications 72(4), 1989
A Monte Carlo computer program for the transport of energetic ions in amorphous targets☆
BIERSACK, Nuclear Instruments and Methods 174(1-2), 1980
BIERSACK, Nuclear Instruments and Methods 174(1-2), 1980
Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study
SKUDLIK, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 63(1-2), 1992
SKUDLIK, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 63(1-2), 1992
Deactivation of the boron acceptor in silicon by hydrogen
Sah, Applied Physics Letters 43(2), 1983
Sah, Applied Physics Letters 43(2), 1983
Neutralization of acceptors in silicon by atomic hydrogen
Pankove, Applied Physics Letters 45(10), 1984
Pankove, Applied Physics Letters 45(10), 1984
Hydrogenation of shallow and deep levels in silicon
JAWOROWSKI, Materials Science and Engineering B 4(1-4), 1989
JAWOROWSKI, Materials Science and Engineering B 4(1-4), 1989
Perturbed angular correlation spectroscopy of hydrogen-passivated indium acceptors in silicon
BAURICHTER, Materials Science and Engineering B 4(1-4), 1989
BAURICHTER, Materials Science and Engineering B 4(1-4), 1989
A study of the majority carrier mobility in hydrogenated boron-doped silicon
Chari, Solid State Communications 71(2), 1989
Chari, Solid State Communications 71(2), 1989
Hydrogen in crystalline semiconductors
Pearton, Applied Physics A Solids and Surfaces 43(3), 1987
Pearton, Applied Physics A Solids and Surfaces 43(3), 1987
Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation
Zundel, Applied Physics A Solids and Surfaces 48(1), 1989
Zundel, Applied Physics A Solids and Surfaces 48(1), 1989
Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy
Wichert, Applied Physics A Solids and Surfaces 48(1), 1989
Wichert, Applied Physics A Solids and Surfaces 48(1), 1989
The Electronic Structure and Aromic Configuration of Hydrogen in Silicon
Sasaki, Journal of the Physical Society of Japan 58(5), 1989
Sasaki, Journal of the Physical Society of Japan 58(5), 1989
The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing
Seager, Journal of Materials Research 2(1), 1987
Seager, Journal of Materials Research 2(1), 1987
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