Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T (1992)
Phys. Rev. B 46(4): 2172-2182.
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Autor*in
Skudlik, H.;
Deicher, M.;
Keller, R.;
Magerle, R.;
Pfeiffer, WalterUniBi;
Pross, P.;
Recknagel, E.;
Wichert, T.
Abstract / Bemerkung
With the radioactive probe atom In-111 as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-gamma-gamma-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.
Erscheinungsjahr
1992
Zeitschriftentitel
Phys. Rev. B
Band
46
Ausgabe
4
Seite(n)
2172-2182
ISSN
0163-1829
eISSN
1095-3795
Page URI
https://pub.uni-bielefeld.de/record/2407806
Zitieren
Skudlik H, Deicher M, Keller R, et al. Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B. 1992;46(4):2172-2182.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., et al. (1992). Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B, 46(4), 2172-2182. https://doi.org/10.1103/PhysRevB.46.2172
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., Recknagel, E., and Wichert, T. 1992. “Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique”. Phys. Rev. B 46 (4): 2172-2182.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., and Wichert, T. (1992). Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B 46, 2172-2182.
Skudlik, H., et al., 1992. Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B, 46(4), p 2172-2182.
H. Skudlik, et al., “Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique”, Phys. Rev. B, vol. 46, 1992, pp. 2172-2182.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., Wichert, T.: Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique. Phys. Rev. B. 46, 2172-2182 (1992).
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., Recknagel, E., and Wichert, T. “Hydrogen passivation of shallow acceptors in silicon studied by use of the perturbed gamma-gamma-angular-correlation technique”. Phys. Rev. B 46.4 (1992): 2172-2182.
1 Zitation in Europe PMC
Daten bereitgestellt von Europe PubMed Central.
Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys Rev B Condens Matter 46(4), 1992
PMID: 10003892
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys Rev B Condens Matter 46(4), 1992
PMID: 10003892
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