HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY

FORKEL-WIRTH D, ACHTZIGER N, BURCHARD A, CORREIA JC, DEICHER M, LICHT T, MAGERLE R, MARQUES JG, MEIER J, Pfeiffer W, REISLOHNER U, et al. (1995)
Solid State Communications 93(5): 425-430.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Abstract / Bemerkung
Formation, structure, and stability of hydrogen correlated complexes, created at Cd accepters in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation technique (PAC). In InP and GaP, the stability of Cd-H pairs is very similar for comparable Cd concentrations (E(D) = 1.4(2) eV and E(D) = 1.5(1) eV). In InAs, two different hydrogen correlated configurations are observed, one could be identified as Cd-H pair, oriented in [111] lattice direction (v(Q) = 427 MHz, eta = 0). The second complex involves at least one H atom and radiation defects or, favoured by a defect induced, secondary mechanism several hydrogen atoms.
Stichworte
EFFECTS; X-RAY AND GAMMA-RAY SPECTROSCOPIES; RADIATION; POINT DEFECTS; IMPURITIES IN SEMICONDUCTORS; SEMICONDUCTORS
Erscheinungsjahr
1995
Zeitschriftentitel
Solid State Communications
Band
93
Ausgabe
5
Seite(n)
425-430
ISSN
0038-1098
Page URI
https://pub.uni-bielefeld.de/record/2407715

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FORKEL-WIRTH D, ACHTZIGER N, BURCHARD A, et al. HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY. Solid State Communications. 1995;93(5):425-430.
FORKEL-WIRTH, D., ACHTZIGER, N., BURCHARD, A., CORREIA, J. C., DEICHER, M., LICHT, T., MAGERLE, R., et al. (1995). HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY. Solid State Communications, 93(5), 425-430. doi:10.1016/0038-1098(94)00811-6
FORKEL-WIRTH, D., ACHTZIGER, N., BURCHARD, A., CORREIA, J. C., DEICHER, M., LICHT, T., MAGERLE, R., MARQUES, J. G., MEIER, J., Pfeiffer, W., et al. (1995). HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY. Solid State Communications 93, 425-430.
FORKEL-WIRTH, D., et al., 1995. HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY. Solid State Communications, 93(5), p 425-430.
D. FORKEL-WIRTH, et al., “HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY”, Solid State Communications, vol. 93, 1995, pp. 425-430.
FORKEL-WIRTH, D., ACHTZIGER, N., BURCHARD, A., CORREIA, J.C., DEICHER, M., LICHT, T., MAGERLE, R., MARQUES, J.G., MEIER, J., Pfeiffer, W., REISLOHNER, U., Rüb, M., TOULEMONDE, M., WITTHUHN, W.: HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY. Solid State Communications. 93, 425-430 (1995).
FORKEL-WIRTH, D., ACHTZIGER, N., BURCHARD, A., CORREIA, J. C., DEICHER, M., LICHT, T., MAGERLE, R., MARQUES, J.G., MEIER, J., Pfeiffer, Walter, REISLOHNER, U., Rüb, M., TOULEMONDE, M., and WITTHUHN, W. “HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY”. Solid State Communications 93.5 (1995): 425-430.