Radioactive isotopes in photoluminescence experiments: Identification of defect levels
Magerle R, Burchard A, Deicher M, Kerle T, Pfeiffer W, Recknagel E (1995)
Physical Review Letters 75(8): 1594-1597.
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Autor*in
Magerle, R.;
Burchard, A.;
Deicher, M.;
Kerle, T.;
Pfeiffer, WalterUniBi;
Recknagel, E.
Abstract / Bemerkung
The characteristic lifetimes of radioactive isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This is demonstrated in GaAs doped with radioactive In-111. During its decay to Cd-111 all those PL peaks increase for which Cd accepters are involved. By deriving a quantitative relation between PL intensity and Cd concentration we show that this intensity increase is determined only by the nuclear lifetime of In-111. Thus we gain a complete and independent identification of the Cd related PL peaks in GaAs.
Erscheinungsjahr
1995
Zeitschriftentitel
Physical Review Letters
Band
75
Ausgabe
8
Seite(n)
1594-1597
ISSN
0031-9007
eISSN
1079-7114
Page URI
https://pub.uni-bielefeld.de/record/2407707
Zitieren
Magerle R, Burchard A, Deicher M, Kerle T, Pfeiffer W, Recknagel E. Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters. 1995;75(8):1594-1597.
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W., & Recknagel, E. (1995). Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters, 75(8), 1594-1597. https://doi.org/10.1103/PhysRevLett.75.1594
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, Walter, and Recknagel, E. 1995. “Radioactive isotopes in photoluminescence experiments: Identification of defect levels”. Physical Review Letters 75 (8): 1594-1597.
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W., and Recknagel, E. (1995). Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters 75, 1594-1597.
Magerle, R., et al., 1995. Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters, 75(8), p 1594-1597.
R. Magerle, et al., “Radioactive isotopes in photoluminescence experiments: Identification of defect levels”, Physical Review Letters, vol. 75, 1995, pp. 1594-1597.
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W., Recknagel, E.: Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters. 75, 1594-1597 (1995).
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, Walter, and Recknagel, E. “Radioactive isotopes in photoluminescence experiments: Identification of defect levels”. Physical Review Letters 75.8 (1995): 1594-1597.
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13 References
Daten bereitgestellt von Europe PubMed Central.
AUTHOR UNKNOWN, 1989
Photoluminescence of AlxGa1−xAs alloys
Pavesi, Journal of Applied Physics 75(10), 1994
Pavesi, Journal of Applied Physics 75(10), 1994
Identification of band-gap states by deep level transient spectroscopy on radioactive probes: The case of Au and Pt in silicon
Petersen, Applied Physics Letters 56(12), 1990
Petersen, Applied Physics Letters 56(12), 1990
Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor deposition
Bose, Applied Physics Letters 56(8), 1990
Bose, Applied Physics Letters 56(8), 1990
Annealing of Cd-implanted GaAs: Defect removal, lattice site occupation, and electrical activation
Moriya, Journal of Applied Physics 73(9), 1993
Moriya, Journal of Applied Physics 73(9), 1993
Pons, Journal of Physics C Solid State Physics 18(20), 1985
Canham, Journal of Physics C Solid State Physics 13(27), 1980
Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors.
Chadi DJ., Phys. Rev. Lett. 72(4), 1994
PMID: 10056457
Chadi DJ., Phys. Rev. Lett. 72(4), 1994
PMID: 10056457
Arsenic antisite defect AsGa and EL2 in GaAs.
Meyer BK, Hofmann DM, Niklas JR, Spaeth J., Phys. Rev., B Condens. Matter 36(2), 1987
PMID: 9942957
Meyer BK, Hofmann DM, Niklas JR, Spaeth J., Phys. Rev., B Condens. Matter 36(2), 1987
PMID: 9942957
Isoelectronic Trap Li-Li-O in GaP
Dean, Physical Review B 4(8), 1971
Dean, Physical Review B 4(8), 1971
Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
Mandel, Physical Review 134(4a), 1964
Mandel, Physical Review 134(4a), 1964
Donors and acceptors in tellurium compounds; The problem of doping and self-compensation
Pautrat, Journal of Crystal Growth 72(1-2), 1985
Pautrat, Journal of Crystal Growth 72(1-2), 1985
Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*
Lang, Applied Physics A Solids and Surfaces 53(2), 1991
Lang, Applied Physics A Solids and Surfaces 53(2), 1991
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