Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method

Siebke F, Stiebig H (1996)
Journal of Non-Cryst. Solids 200: 351-354.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
Download
Es wurden keine Dateien hochgeladen. Nur Publikationsnachweis!
Autor*in
Abstract / Bemerkung
The defect distributions of amorphous silicon with various doping levels are determined by comparison of measured and simulated constant photocurrent method spectra for the annealed as well as for the degraded state. In both cases the defect distributions are dominated by charged states. The dopant induced changes in the density of localized states are discussed in the context of the defect-pool model.
Erscheinungsjahr
1996
Zeitschriftentitel
Journal of Non-Cryst. Solids
Band
200
Seite(n)
351-354
ISSN
0022-3093
Page URI
https://pub.uni-bielefeld.de/record/2351961

Zitieren

Siebke F, Stiebig H. Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method. Journal of Non-Cryst. Solids. 1996;200:351-354.
Siebke, F., & Stiebig, H. (1996). Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method. Journal of Non-Cryst. Solids, 200, 351-354.
Siebke, F., and Stiebig, H. (1996). Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method. Journal of Non-Cryst. Solids 200, 351-354.
Siebke, F., & Stiebig, H., 1996. Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method. Journal of Non-Cryst. Solids, 200, p 351-354.
F. Siebke and H. Stiebig, “Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method”, Journal of Non-Cryst. Solids, vol. 200, 1996, pp. 351-354.
Siebke, F., Stiebig, H.: Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method. Journal of Non-Cryst. Solids. 200, 351-354 (1996).
Siebke, F., and Stiebig, Helmut. “Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method”. Journal of Non-Cryst. Solids 200 (1996): 351-354.

Export

Markieren/ Markierung löschen
Markierte Publikationen

Open Data PUB

Web of Science

Dieser Datensatz im Web of Science®

Suchen in

Google Scholar