Investigation of the optoelectronic properties of mu c-Si : H pin solar cells

Stiebig H, Brammer T, Zimmer J, Vetterl O, Wagner H (2000)
Journal of Non-Cryst. Solids 266-269: 1104-1108.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Stiebig, HelmutUniBi; Brammer, T.; Zimmer, J.; Vetterl, O.; Wagner, H.
Abstract / Bemerkung
We have investigated microcrystalline silicon (mu c-Si:H) pin solar cells deposited at different silane concentrations in the gas phase varying from 2% to 7.2%. For these cells three features were found: the dark current of the cells decreased, the open circuit voltage increased and the blue response reduced with increasing silane concentration during deposition. Tn study the transport and recombination of these structures we have compared the experimentally determined optoelectronic properties with simulated data. The simulations reveal that the equilibrium carrier concentration of free carriers decreases and the affect of the nucleation region of the i-layer on the blue response increases with increasing silane concentration. (C) 2000 Elsevier Science B.V. All rights reserved.
Erscheinungsjahr
2000
Zeitschriftentitel
Journal of Non-Cryst. Solids
Band
266-269
Seite(n)
1104-1108
ISSN
0022-3093
Page URI
https://pub.uni-bielefeld.de/record/2351871

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Stiebig H, Brammer T, Zimmer J, Vetterl O, Wagner H. Investigation of the optoelectronic properties of mu c-Si : H pin solar cells. Journal of Non-Cryst. Solids. 2000;266-269:1104-1108.
Stiebig, H., Brammer, T., Zimmer, J., Vetterl, O., & Wagner, H. (2000). Investigation of the optoelectronic properties of mu c-Si : H pin solar cells. Journal of Non-Cryst. Solids, 266-269, 1104-1108. https://doi.org/10.1016/S0022-3093(99)00911-4
Stiebig, Helmut, Brammer, T., Zimmer, J., Vetterl, O., and Wagner, H. 2000. “Investigation of the optoelectronic properties of mu c-Si : H pin solar cells”. Journal of Non-Cryst. Solids 266-269: 1104-1108.
Stiebig, H., Brammer, T., Zimmer, J., Vetterl, O., and Wagner, H. (2000). Investigation of the optoelectronic properties of mu c-Si : H pin solar cells. Journal of Non-Cryst. Solids 266-269, 1104-1108.
Stiebig, H., et al., 2000. Investigation of the optoelectronic properties of mu c-Si : H pin solar cells. Journal of Non-Cryst. Solids, 266-269, p 1104-1108.
H. Stiebig, et al., “Investigation of the optoelectronic properties of mu c-Si : H pin solar cells”, Journal of Non-Cryst. Solids, vol. 266-269, 2000, pp. 1104-1108.
Stiebig, H., Brammer, T., Zimmer, J., Vetterl, O., Wagner, H.: Investigation of the optoelectronic properties of mu c-Si : H pin solar cells. Journal of Non-Cryst. Solids. 266-269, 1104-1108 (2000).
Stiebig, Helmut, Brammer, T., Zimmer, J., Vetterl, O., and Wagner, H. “Investigation of the optoelectronic properties of mu c-Si : H pin solar cells”. Journal of Non-Cryst. Solids 266-269 (2000): 1104-1108.
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