Amorphous silicon - A promising material for diodes with ultra thin absorber

Stiebig H, Mandryka V, Bunte E, Büchner H-J, Jun KH, Jäger G (2003)
J. Optoelectron. Adv. Mater. 5(5): 1305-1317.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
Download
Es wurden keine Dateien hochgeladen. Nur Publikationsnachweis!
Autor*in
Stiebig, HelmutUniBi; Mandryka, V.; Bunte, E.; Büchner, H.-J.; Jun, K. H.; Jäger, G.
Abstract / Bemerkung
Novel interferometers for length and displacement measurements based on sampling an optical standing wave will be presented. The interference of two laser beams propagating in opposite direction results in a sinusoidal light intensity profile, which can be detected by thin transparent photodiodes based on amorphous silicon. Two individual detectors positioned on he optical axis of a standing wave allow bi-directional fringe counting. The operation principle of set-ups consisting of two individual nip-photodiodes on one hand and a phase sensitive transparent photodiode based on two integrated nip-diodes on the other hand will be discussed. With both set-ups Lissajous figures are detected demonstrating the feasibility of the new concept for length and displacement measurements.
Stichworte
photodiode; photodetector; amorphous silicon; interferometer
Erscheinungsjahr
2003
Zeitschriftentitel
J. Optoelectron. Adv. Mater.
Band
5
Ausgabe
5
Seite(n)
1305-1317
ISSN
1454-4164
Page URI
https://pub.uni-bielefeld.de/record/2351809

Zitieren

Stiebig H, Mandryka V, Bunte E, Büchner H-J, Jun KH, Jäger G. Amorphous silicon - A promising material for diodes with ultra thin absorber. J. Optoelectron. Adv. Mater. 2003;5(5):1305-1317.
Stiebig, H., Mandryka, V., Bunte, E., Büchner, H. - J., Jun, K. H., & Jäger, G. (2003). Amorphous silicon - A promising material for diodes with ultra thin absorber. J. Optoelectron. Adv. Mater., 5(5), 1305-1317.
Stiebig, H., Mandryka, V., Bunte, E., Büchner, H. - J., Jun, K. H., and Jäger, G. (2003). Amorphous silicon - A promising material for diodes with ultra thin absorber. J. Optoelectron. Adv. Mater. 5, 1305-1317.
Stiebig, H., et al., 2003. Amorphous silicon - A promising material for diodes with ultra thin absorber. J. Optoelectron. Adv. Mater., 5(5), p 1305-1317.
H. Stiebig, et al., “Amorphous silicon - A promising material for diodes with ultra thin absorber”, J. Optoelectron. Adv. Mater., vol. 5, 2003, pp. 1305-1317.
Stiebig, H., Mandryka, V., Bunte, E., Büchner, H.-J., Jun, K.H., Jäger, G.: Amorphous silicon - A promising material for diodes with ultra thin absorber. J. Optoelectron. Adv. Mater. 5, 1305-1317 (2003).
Stiebig, Helmut, Mandryka, V., Bunte, E., Büchner, H.-J., Jun, K. H., and Jäger, G. “Amorphous silicon - A promising material for diodes with ultra thin absorber”. J. Optoelectron. Adv. Mater. 5.5 (2003): 1305-1317.

Export

Markieren/ Markierung löschen
Markierte Publikationen

Open Data PUB

Web of Science

Dieser Datensatz im Web of Science®

Suchen in

Google Scholar