Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers
Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F (2005)
Applied Physics Letters 87(7): 073503.
Zeitschriftenaufsatz
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Autor*in
Mai, Y;
Klein, S;
Carius, R;
Stiebig, HelmutUniBi;
Geng, X;
Finger, F
Abstract / Bemerkung
Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon (mu c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic mu c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the mu c-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction mu c-Si:H solar cell. (C) 2005 American Institute of Physics.
Erscheinungsjahr
2005
Zeitschriftentitel
Applied Physics Letters
Band
87
Ausgabe
7
Seite(n)
073503
ISSN
0003-6951
Page URI
https://pub.uni-bielefeld.de/record/2351757
Zitieren
Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters. 2005;87(7):073503.
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., & Finger, F. (2005). Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters, 87(7), 073503. https://doi.org/10.1063/1.2011771
Mai, Y, Klein, S, Carius, R, Stiebig, Helmut, Geng, X, and Finger, F. 2005. “Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers”. Applied Physics Letters 87 (7): 073503.
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., and Finger, F. (2005). Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters 87, 073503.
Mai, Y., et al., 2005. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters, 87(7), p 073503.
Y. Mai, et al., “Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers”, Applied Physics Letters, vol. 87, 2005, pp. 073503.
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., Finger, F.: Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters. 87, 073503 (2005).
Mai, Y, Klein, S, Carius, R, Stiebig, Helmut, Geng, X, and Finger, F. “Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers”. Applied Physics Letters 87.7 (2005): 073503.
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