Ambipolar microcrystalline silicon transistors and inverters

Chan K-Y, Knipp D, Kirchhoff J, Gordijn A, Stiebig H (2009)
Solid-State Electronics 53(6): 635-639.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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DOI
Autor*in
Chan, Kah-Yoong; Knipp, Dietmar; Kirchhoff, Joachim; Gordijn, Aad; Stiebig, HelmutUniBi
Einrichtung
Fakultät für Physik > Lehrstuhl für Molekül- und Oberflächenphysik
Abstract / Bemerkung
Hydrogenated microcrystalline silicon (mu c-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition at low deposition temperature of 160 degrees C. The electrical parameters of the ambipolar microcrystalline silicon TFTs and inverters will be described. The influence of contact effects on the operation of ambipolar microcrystalline silicon TFTs was investigated. Furthermore, the influence of the ambipolar transistor characteristics on the performance of the ambipolar inverter will be discussed. (C) 2009 Elsevier Ltd. All rights reserved.
Stichworte
Microcrystalline silicon; TFTs; Ambipolar inverter; Ambipolar transistor
Erscheinungsjahr
2009
Zeitschriftentitel
Solid-State Electronics
Band
53
Ausgabe
6
Seite(n)
635-639
ISSN
0038-1101
Page URI
https://pub.uni-bielefeld.de/record/2351656

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Chan K-Y, Knipp D, Kirchhoff J, Gordijn A, Stiebig H. Ambipolar microcrystalline silicon transistors and inverters. Solid-State Electronics. 2009;53(6):635-639.
Chan, K. - Y., Knipp, D., Kirchhoff, J., Gordijn, A., & Stiebig, H. (2009). Ambipolar microcrystalline silicon transistors and inverters. Solid-State Electronics, 53(6), 635-639. https://doi.org/10.1016/j.sse.2009.04.002
Chan, Kah-Yoong, Knipp, Dietmar, Kirchhoff, Joachim, Gordijn, Aad, and Stiebig, Helmut. 2009. “Ambipolar microcrystalline silicon transistors and inverters”. Solid-State Electronics 53 (6): 635-639.
Chan, K. - Y., Knipp, D., Kirchhoff, J., Gordijn, A., and Stiebig, H. (2009). Ambipolar microcrystalline silicon transistors and inverters. Solid-State Electronics 53, 635-639.
Chan, K.-Y., et al., 2009. Ambipolar microcrystalline silicon transistors and inverters. Solid-State Electronics, 53(6), p 635-639.
K.-Y. Chan, et al., “Ambipolar microcrystalline silicon transistors and inverters”, Solid-State Electronics, vol. 53, 2009, pp. 635-639.
Chan, K.-Y., Knipp, D., Kirchhoff, J., Gordijn, A., Stiebig, H.: Ambipolar microcrystalline silicon transistors and inverters. Solid-State Electronics. 53, 635-639 (2009).
Chan, Kah-Yoong, Knipp, Dietmar, Kirchhoff, Joachim, Gordijn, Aad, and Stiebig, Helmut. “Ambipolar microcrystalline silicon transistors and inverters”. Solid-State Electronics 53.6 (2009): 635-639.
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