High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C
Chan KY, Bunte E, Stiebig H, Knipp D (2008)
Chinese Journal of Electron Devices 31(1): 109-114.
Zeitschriftenaufsatz
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Autor*in
Chan, K.Y.;
Bunte, E.;
Stiebig, HelmutUniBi;
Knipp, D.
Erscheinungsjahr
2008
Zeitschriftentitel
Chinese Journal of Electron Devices
Band
31
Ausgabe
1
Seite(n)
109-114
ISSN
1005-9490
Page URI
https://pub.uni-bielefeld.de/record/2343823
Zitieren
Chan KY, Bunte E, Stiebig H, Knipp D. High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices. 2008;31(1):109-114.
Chan, K. Y., Bunte, E., Stiebig, H., & Knipp, D. (2008). High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices, 31(1), 109-114.
Chan, K.Y., Bunte, E., Stiebig, Helmut, and Knipp, D. 2008. “High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C”. Chinese Journal of Electron Devices 31 (1): 109-114.
Chan, K. Y., Bunte, E., Stiebig, H., and Knipp, D. (2008). High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices 31, 109-114.
Chan, K.Y., et al., 2008. High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices, 31(1), p 109-114.
K.Y. Chan, et al., “High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C”, Chinese Journal of Electron Devices, vol. 31, 2008, pp. 109-114.
Chan, K.Y., Bunte, E., Stiebig, H., Knipp, D.: High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices. 31, 109-114 (2008).
Chan, K.Y., Bunte, E., Stiebig, Helmut, and Knipp, D. “High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C”. Chinese Journal of Electron Devices 31.1 (2008): 109-114.
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