Annealing of damage in GaAs and InP after implantation of Cd and In
Pfeiffer W, Deicher M, Kalish R, Keller R, Magerle R, Moriya N, Pross P, Skudlik H, Wichert T, Wolf A (1992)
In: Defects in Semiconductors. Davies G, DeLeo GG, Stavola M (Eds); Materials Science Forum. Trans Tech Publications: 1481.
Sammelwerksbeitrag | Englisch
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Autor*in
Pfeiffer, WalterUniBi;
Deicher, M.;
Kalish, R.;
Keller, R.;
Magerle, R.;
Moriya, N.;
Pross, P.;
Skudlik, H.;
Wichert, Th.;
Wolf, A.
Herausgeber*in
Davies, G.;
DeLeo, G.G.;
Stavola, M.
Erscheinungsjahr
1992
Buchtitel
Defects in Semiconductors
Seite(n)
1481
Page URI
https://pub.uni-bielefeld.de/record/2316082
Zitieren
Pfeiffer W, Deicher M, Kalish R, et al. Annealing of damage in GaAs and InP after implantation of Cd and In. In: Davies G, DeLeo GG, Stavola M, eds. Defects in Semiconductors. Materials Science Forum. Trans Tech Publications; 1992: 1481.
Pfeiffer, W., Deicher, M., Kalish, R., Keller, R., Magerle, R., Moriya, N., Pross, P., et al. (1992). Annealing of damage in GaAs and InP after implantation of Cd and In. In G. Davies, G. G. DeLeo, & M. Stavola (Eds.), Defects in Semiconductors (Materials Science Forum., p. 1481). Trans Tech Publications.
Pfeiffer, Walter, Deicher, M., Kalish, R., Keller, R., Magerle, R., Moriya, N., Pross, P., Skudlik, H., Wichert, Th., and Wolf, A. 1992. “Annealing of damage in GaAs and InP after implantation of Cd and In”. In Defects in Semiconductors, ed. G. Davies, G.G. DeLeo, and M. Stavola, Materials Science Forum, 1481. Trans Tech Publications.
Pfeiffer, W., Deicher, M., Kalish, R., Keller, R., Magerle, R., Moriya, N., Pross, P., Skudlik, H., Wichert, T., and Wolf, A. (1992). “Annealing of damage in GaAs and InP after implantation of Cd and In” in Defects in Semiconductors, Davies, G., DeLeo, G. G., and Stavola, M. eds. Materials Science Forum. (Trans Tech Publications), 1481.
Pfeiffer, W., et al., 1992. Annealing of damage in GaAs and InP after implantation of Cd and In. In G. Davies, G. G. DeLeo, & M. Stavola, eds. Defects in Semiconductors. Materials Science Forum. Trans Tech Publications, pp. 1481.
W. Pfeiffer, et al., “Annealing of damage in GaAs and InP after implantation of Cd and In”, Defects in Semiconductors, G. Davies, G.G. DeLeo, and M. Stavola, eds., Materials Science Forum., Trans Tech Publications, 1992, pp.1481.
Pfeiffer, W., Deicher, M., Kalish, R., Keller, R., Magerle, R., Moriya, N., Pross, P., Skudlik, H., Wichert, T., Wolf, A.: Annealing of damage in GaAs and InP after implantation of Cd and In. In: Davies, G., DeLeo, G.G., and Stavola, M. (eds.) Defects in Semiconductors. Materials Science Forum. p. 1481. Trans Tech Publications (1992).
Pfeiffer, Walter, Deicher, M., Kalish, R., Keller, R., Magerle, R., Moriya, N., Pross, P., Skudlik, H., Wichert, Th., and Wolf, A. “Annealing of damage in GaAs and InP after implantation of Cd and In”. Defects in Semiconductors. Ed. G. Davies, G.G. DeLeo, and M. Stavola. Materials Science Forum. Trans Tech Publications, 1992. 1481.
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