Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T (1992)
Phys. Rev. B 46(4): 2159-2171.
Zeitschriftenaufsatz
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Autor*in
Skudlik, H.;
Deicher, M.;
Keller, R.;
Magerle, R.;
Pfeiffer, WalterUniBi;
Pross, P.;
Recknagel, E.;
Wichert, Th.
Abstract / Bemerkung
The perturbed-gamma-gamma-angular-correlation technique (PAC) is a valuable tool for the characterization of defect complexes in crystalline materials. The features of the technique arising in the application to semiconductors are illustrated using the example of In-111-H pairs in Si. This system was studied in the course of an investigation of the passivation of acceptors in Si by H. The consequences of the chemical transmutation of the radioactive probe atoms are discussed. Using Schottky-diode structures, it is shown that PAC is well suited for use in combination with electrical techniques. The PAC technique, which works at any temperature and over a wide range of dopant concentrations, is also sensitive to different charge states of the defect complexes formed. A discussion of the results focuses on the influence of electronic parameters on the electric-field gradient measured at the In-111/Cd-111-H pairs in Si.
Erscheinungsjahr
1992
Zeitschriftentitel
Phys. Rev. B
Band
46
Ausgabe
4
Seite(n)
2159-2171
ISSN
0163-1829
eISSN
1095-3795
Page URI
https://pub.uni-bielefeld.de/record/2316057
Zitieren
Skudlik H, Deicher M, Keller R, et al. Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si. Phys. Rev. B. 1992;46(4):2159-2171.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., et al. (1992). Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si. Phys. Rev. B, 46(4), 2159-2171. https://doi.org/10.1103/PhysRevB.46.2159
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., Recknagel, E., and Wichert, Th. 1992. “Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si”. Phys. Rev. B 46 (4): 2159-2171.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., and Wichert, T. (1992). Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si. Phys. Rev. B 46, 2159-2171.
Skudlik, H., et al., 1992. Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si. Phys. Rev. B, 46(4), p 2159-2171.
H. Skudlik, et al., “Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si”, Phys. Rev. B, vol. 46, 1992, pp. 2159-2171.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Recknagel, E., Wichert, T.: Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si. Phys. Rev. B. 46, 2159-2171 (1992).
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., Recknagel, E., and Wichert, Th. “Influence of electronic parameters on the electric field gradients induced by H at the probe atom III In/III Cd in Si”. Phys. Rev. B 46.4 (1992): 2159-2171.
Daten bereitgestellt von European Bioinformatics Institute (EBI)
4 Zitationen in Europe PMC
Daten bereitgestellt von Europe PubMed Central.
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PMID: 22119739
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Perturbed-angular-correlation spectroscopy of the fluctuating hyperfine interaction at Cd-donor pairs in silicon: An approach to electronic transitions at impurities in semiconductors.
Achtziger N, Witthuhn W., Phys Rev B Condens Matter 47(12), 1993
PMID: 10004693
Achtziger N, Witthuhn W., Phys Rev B Condens Matter 47(12), 1993
PMID: 10004693
Perturbed-angular-correlation experiments with 111In in MBa2Cu3O7- delta (M=Y,Yb): The Cu(1)-site puzzle.
Bartos A, Uhrmacher M., Phys Rev B Condens Matter 48(10), 1993
PMID: 10006914
Bartos A, Uhrmacher M., Phys Rev B Condens Matter 48(10), 1993
PMID: 10006914
H passivation of shallow acceptors in Si studied by use of the perturbed- gamma gamma -angular-correlation technique.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T., Phys Rev B Condens Matter 46(4), 1992
PMID: 10003893
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T., Phys Rev B Condens Matter 46(4), 1992
PMID: 10003893
22 References
Daten bereitgestellt von Europe PubMed Central.
AUTHOR UNKNOWN, 1983
AUTHOR UNKNOWN, 1991
AUTHOR UNKNOWN, 0
AUTHOR UNKNOWN, 1990
AUTHOR UNKNOWN, 1968
AUTHOR UNKNOWN, at energy rev 17(), 1979
AUTHOR UNKNOWN, 0
AUTHOR UNKNOWN, hyperfine interact 15(), 1983
Cd-H pairs in GaAs: Identification and stability
Pfeiffer, Applied Physics Letters 58(16), 1991
Pfeiffer, Applied Physics Letters 58(16), 1991
Acceptor-defect complexes in GaAs studied by perturbed angular correlation spectroscopy
Baurichter, Applied Physics Letters 55(22), 1989
Baurichter, Applied Physics Letters 55(22), 1989
Microscopic structure of the hydrogen-boron complex in crystalline silicon.
Denteneer PJ, Van de Walle CG , Pantelides ST., Phys. Rev., B Condens. Matter 39(15), 1989
PMID: 9947890
Denteneer PJ, Van de Walle CG , Pantelides ST., Phys. Rev., B Condens. Matter 39(15), 1989
PMID: 9947890
Passivation of shallow acceptors by H in Si: A microscopic study by perturbed angular correlations.
Wichert T, Skudlik H, Deicher M, Grubel G, Keller R, Recknagel E, Song aL., Phys. Rev. Lett. 59(18), 1987
PMID: 10035414
Wichert T, Skudlik H, Deicher M, Grubel G, Keller R, Recknagel E, Song aL., Phys. Rev. Lett. 59(18), 1987
PMID: 10035414
Copper in silicon.
Keller R, Deicher M, Pfeiffer W, Skudlik H, Steiner D, Wichert T., Phys. Rev. Lett. 65(16), 1990
PMID: 10042427
Keller R, Deicher M, Pfeiffer W, Skudlik H, Steiner D, Wichert T., Phys. Rev. Lett. 65(16), 1990
PMID: 10042427
Hydrogen passivation of shallow acceptors and donors in c-Si: Comparisons and trends.
Estreicher SK, Throckmorton L, Marynick DS., Phys. Rev., B Condens. Matter 39(18), 1989
PMID: 9948225
Estreicher SK, Throckmorton L, Marynick DS., Phys. Rev., B Condens. Matter 39(18), 1989
PMID: 9948225
Interpretation of vacancy migration, trapping, and clustering in fcc metals as observed through perturbed angular correlations and distributions of γ rays
Pleiter, Physical Review B 25(1), 1982
Pleiter, Physical Review B 25(1), 1982
H passivation of shallow acceptors in Si studied by use of the perturbed- gamma gamma -angular-correlation technique.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T., Phys. Rev., B Condens. Matter 46(4), 1992
PMID: 10003893
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T., Phys. Rev., B Condens. Matter 46(4), 1992
PMID: 10003893
Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)
MAGERLE, Applied Surface Science 50(1-4), 1991
MAGERLE, Applied Surface Science 50(1-4), 1991
Investigation of cadmium-hydrogen complexes in silicon
GEBHARD, Physica B Condensed Matter 170(1-4), 1991
GEBHARD, Physica B Condensed Matter 170(1-4), 1991
Indium-vacancy interaction in laser-annealed silicon
KEMERINK, Physics Letters A 121(7), 1987
KEMERINK, Physics Letters A 121(7), 1987
Perturbed angular correlation spectroscopy of hydrogen-passivated indium acceptors in silicon
BAURICHTER, Materials Science and Engineering B 4(1-4), 1989
BAURICHTER, Materials Science and Engineering B 4(1-4), 1989
Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy
Wichert, Applied Physics A Solids and Surfaces 48(1), 1989
Wichert, Applied Physics A Solids and Surfaces 48(1), 1989
73Se, an unusual PAC probe applied to the study of semiconductors
Vianden, Hyperfine Interactions 61(1-4), 1990
Vianden, Hyperfine Interactions 61(1-4), 1990
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