Study of indium implanted GaAs: positron annihilation and electrical measurements
Pfeiffer W, Liszkay L, Burchard A, Deicher M, Magerle R, Ronning C, Saarinen K, Hautojärvi P (1994)
In: Defects in Semiconductors. Heinrich H, Jantsch W (Eds); Materials Science Forum. Trans Tech Publications: 143-147.
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| Veröffentlicht | Englisch
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Autor*in
Pfeiffer, WalterUniBi;
Liszkay, L.;
Burchard, A.;
Deicher, M.;
Magerle, R.;
Ronning, C.;
Saarinen, K.;
Hautojärvi, P.
Herausgeber*in
Heinrich, H.;
Jantsch, W.
Erscheinungsjahr
1994
Buchtitel
Defects in Semiconductors
Seite(n)
143-147
Page URI
https://pub.uni-bielefeld.de/record/2316001
Zitieren
Pfeiffer W, Liszkay L, Burchard A, et al. Study of indium implanted GaAs: positron annihilation and electrical measurements. In: Heinrich H, Jantsch W, eds. Defects in Semiconductors. Materials Science Forum. Trans Tech Publications; 1994: 143-147.
Pfeiffer, W., Liszkay, L., Burchard, A., Deicher, M., Magerle, R., Ronning, C., Saarinen, K., et al. (1994). Study of indium implanted GaAs: positron annihilation and electrical measurements. In H. Heinrich & W. Jantsch (Eds.), Defects in Semiconductors (Materials Science Forum., pp. 143-147). Trans Tech Publications.
Pfeiffer, Walter, Liszkay, L., Burchard, A., Deicher, M., Magerle, R., Ronning, C., Saarinen, K., and Hautojärvi, P. 1994. “Study of indium implanted GaAs: positron annihilation and electrical measurements”. In Defects in Semiconductors, ed. H. Heinrich and W. Jantsch, Materials Science Forum, 143-147. Trans Tech Publications.
Pfeiffer, W., Liszkay, L., Burchard, A., Deicher, M., Magerle, R., Ronning, C., Saarinen, K., and Hautojärvi, P. (1994). “Study of indium implanted GaAs: positron annihilation and electrical measurements” in Defects in Semiconductors, Heinrich, H., and Jantsch, W. eds. Materials Science Forum. (Trans Tech Publications), 143-147.
Pfeiffer, W., et al., 1994. Study of indium implanted GaAs: positron annihilation and electrical measurements. In H. Heinrich & W. Jantsch, eds. Defects in Semiconductors. Materials Science Forum. Trans Tech Publications, pp. 143-147.
W. Pfeiffer, et al., “Study of indium implanted GaAs: positron annihilation and electrical measurements”, Defects in Semiconductors, H. Heinrich and W. Jantsch, eds., Materials Science Forum., Trans Tech Publications, 1994, pp.143-147.
Pfeiffer, W., Liszkay, L., Burchard, A., Deicher, M., Magerle, R., Ronning, C., Saarinen, K., Hautojärvi, P.: Study of indium implanted GaAs: positron annihilation and electrical measurements. In: Heinrich, H. and Jantsch, W. (eds.) Defects in Semiconductors. Materials Science Forum. p. 143-147. Trans Tech Publications (1994).
Pfeiffer, Walter, Liszkay, L., Burchard, A., Deicher, M., Magerle, R., Ronning, C., Saarinen, K., and Hautojärvi, P. “Study of indium implanted GaAs: positron annihilation and electrical measurements”. Defects in Semiconductors. Ed. H. Heinrich and W. Jantsch. Materials Science Forum. Trans Tech Publications, 1994. 143-147.
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