Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness

van Dorp, W.F.; Laczic, I.; Beyer, André; Gölzhäuser, Armin; Wagner, J.B.; Hansen, T.W.; Hagen, C.W.

Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness

van Dorp WF, Laczic I, Beyer A, Gölzhäuser A, Wagner JB, Hansen TW, Hagen CW (2011)
Nanotechnology 22(11): 115303.

Zeitschriftenaufsatz | Veröffentlicht | Englisch

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DOI

https://doi.org/10.1088/0957-4484/22/11/115303

Autor*in

van Dorp, W.F.; Laczic, I.; Beyer, André^UniBi ; Gölzhäuser, Armin^UniBi ; Wagner, J.B.; Hansen, T.W.; Hagen, C.W.

Einrichtung

Centrum für Biotechnologie > Institut für Biophysik und Nanowissenschaften
Fakultät für Physik > AG Physik supramolekularer Systeme und Oberflächen
Centrum für Biotechnologie > Arbeitsgruppe A. Gölzhäuser

Erscheinungsjahr

2011

Zeitschriftentitel

Nanotechnology

Band

22

Ausgabe

11

Art.-Nr.

115303

ISSN

0957-4484

eISSN

1361-6528

Page URI

https://pub.uni-bielefeld.de/record/1987903

Zitieren

van Dorp WF, Laczic I, Beyer A, et al. Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness. Nanotechnology. 2011;22(11): 115303.

van Dorp, W. F., Laczic, I., Beyer, A., Gölzhäuser, A., Wagner, J. B., Hansen, T. W., & Hagen, C. W. (2011). Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness. Nanotechnology, 22(11), 115303. https://doi.org/10.1088/0957-4484/22/11/115303

van Dorp, W.F., Laczic, I., Beyer, André, Gölzhäuser, Armin, Wagner, J.B., Hansen, T.W., and Hagen, C.W. 2011. “Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness”. Nanotechnology 22 (11): 115303.

van Dorp, W. F., Laczic, I., Beyer, A., Gölzhäuser, A., Wagner, J. B., Hansen, T. W., and Hagen, C. W. (2011). Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness. Nanotechnology 22:115303.

van Dorp, W.F., et al., 2011. Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness. Nanotechnology, 22(11): 115303.

W.F. van Dorp, et al., “Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness”, Nanotechnology, vol. 22, 2011, : 115303.

van Dorp, W.F., Laczic, I., Beyer, A., Gölzhäuser, A., Wagner, J.B., Hansen, T.W., Hagen, C.W.: Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness. Nanotechnology. 22, : 115303 (2011).

van Dorp, W.F., Laczic, I., Beyer, André, Gölzhäuser, Armin, Wagner, J.B., Hansen, T.W., and Hagen, C.W. “Ultrahigh resolution focused electron beam induced processing: the effect of substrate thickness”. Nanotechnology 22.11 (2011): 115303.

4 Zitationen in Europe PMC

Daten bereitgestellt von Europe PubMed Central.

Charged particle single nanometre manufacturing.
Prewett PD, Hagen CW, Lenk C, Lenk S, Kaestner M, Ivanov T, Ahmad A, Rangelow IW, Shi X, Boden SA, Robinson APG, Yang D, Hari S, Scotuzzi M, Huq E., Beilstein J Nanotechnol 9(), 2018
PMID: 30498657

Modelling focused electron beam induced deposition beyond Langmuir adsorption.
Sanz-Hernández D, Fernández-Pacheco A., Beilstein J Nanotechnol 8(), 2017
PMID: 29090116

Complete ligand loss in electron ionization of the weakly bound organometallic tungsten hexacarbonyl dimer.
Neustetter M, Mauracher A, Limão-Vieira P, Denifl S., Phys Chem Chem Phys 18(15), 2016
PMID: 27006205

Low-energy electron interactions with tungsten hexacarbonyl--W(CO)6.
Wnorowski K, Stano M, Matias C, Denifl S, Barszczewska W, Matejčík Š., Rapid Commun Mass Spectrom 26(17), 2012
PMID: 22847710

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