Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces

Küller A, El-Desawy MA, Stadler V, Geyer W, Eck W, Gölzhäuser A (2004)
Journal of Vacuum Science; Technology B 22(3): 1114-1117.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Küller, A.; El-Desawy, M.A.; Stadler, V.; Geyer, W.; Eck, W.; Gölzhäuser, ArminUniBi
Erscheinungsjahr
2004
Zeitschriftentitel
Journal of Vacuum Science; Technology B
Band
22
Ausgabe
3
Seite(n)
1114-1117
ISSN
0734-211X
Page URI
https://pub.uni-bielefeld.de/record/1914781

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Küller A, El-Desawy MA, Stadler V, Geyer W, Eck W, Gölzhäuser A. Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces. Journal of Vacuum Science; Technology B. 2004;22(3):1114-1117.
Küller, A., El-Desawy, M. A., Stadler, V., Geyer, W., Eck, W., & Gölzhäuser, A. (2004). Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces. Journal of Vacuum Science; Technology B, 22(3), 1114-1117. https://doi.org/10.1116/1.1715083
Küller, A., El-Desawy, M. A., Stadler, V., Geyer, W., Eck, W., and Gölzhäuser, A. (2004). Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces. Journal of Vacuum Science; Technology B 22, 1114-1117.
Küller, A., et al., 2004. Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces. Journal of Vacuum Science; Technology B, 22(3), p 1114-1117.
A. Küller, et al., “Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces”, Journal of Vacuum Science; Technology B, vol. 22, 2004, pp. 1114-1117.
Küller, A., El-Desawy, M.A., Stadler, V., Geyer, W., Eck, W., Gölzhäuser, A.: Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces. Journal of Vacuum Science; Technology B. 22, 1114-1117 (2004).
Küller, A., El-Desawy, M.A., Stadler, V., Geyer, W., Eck, W., and Gölzhäuser, Armin. “Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces”. Journal of Vacuum Science; Technology B 22.3 (2004): 1114-1117.

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