Comparison between computational modeling and experiment for a CVD growth process of silicon films
Atakan B, Hofstätter M, Kohse-Höinghaus K (2001)
In: Proceedings of the Electrochemical Society., 2001-13. 268-275.
Konferenzbeitrag
| Veröffentlicht | Englisch
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Autor*in
Atakan, Burak;
Hofstätter, Michael;
Kohse-Höinghaus, KatharinaUniBi
Einrichtung
Erscheinungsjahr
2001
Titel des Konferenzbandes
Proceedings of the Electrochemical Society
Band
2001-13
Seite(n)
268-275
Page URI
https://pub.uni-bielefeld.de/record/1884050
Zitieren
Atakan B, Hofstätter M, Kohse-Höinghaus K. Comparison between computational modeling and experiment for a CVD growth process of silicon films. In: Proceedings of the Electrochemical Society. Vol 2001-13. 2001: 268-275.
Atakan, B., Hofstätter, M., & Kohse-Höinghaus, K. (2001). Comparison between computational modeling and experiment for a CVD growth process of silicon films. Proceedings of the Electrochemical Society, 2001-13, 268-275
Atakan, Burak, Hofstätter, Michael, and Kohse-Höinghaus, Katharina. 2001. “Comparison between computational modeling and experiment for a CVD growth process of silicon films”. In Proceedings of the Electrochemical Society, 2001-13:268-275.
Atakan, B., Hofstätter, M., and Kohse-Höinghaus, K. (2001). “Comparison between computational modeling and experiment for a CVD growth process of silicon films” in Proceedings of the Electrochemical Society, vol. 2001-13, 268-275.
Atakan, B., Hofstätter, M., & Kohse-Höinghaus, K., 2001. Comparison between computational modeling and experiment for a CVD growth process of silicon films. In Proceedings of the Electrochemical Society. no.2001-13 pp. 268-275.
B. Atakan, M. Hofstätter, and K. Kohse-Höinghaus, “Comparison between computational modeling and experiment for a CVD growth process of silicon films”, Proceedings of the Electrochemical Society, vol. 2001-13, 2001, pp.268-275.
Atakan, B., Hofstätter, M., Kohse-Höinghaus, K.: Comparison between computational modeling and experiment for a CVD growth process of silicon films. Proceedings of the Electrochemical Society. 2001-13, p. 268-275. (2001).
Atakan, Burak, Hofstätter, Michael, and Kohse-Höinghaus, Katharina. “Comparison between computational modeling and experiment for a CVD growth process of silicon films”. Proceedings of the Electrochemical Society. 2001.Vol. 2001-13. 268-275.
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