High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers

Heidemann B, Tappe T, Schmiedeskamp B, Heinzmann U (1993)
Thin Solid Films 228(1-2): 60-63.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Heidemann, B.; Tappe, T.; Schmiedeskamp, B.; Heinzmann, UlrichUniBi
Abstract / Bemerkung
High resolution Rutherford backscattering spectroscopy with an electrostatic analysis of the ion energy is applied to Mo/Si multilayers with a period of 7 nm. The multilayers have been produced for X-ray optical purposes by electron beam evaporation in ultrahigh vacuum at three different temperatures during deposition: 30, 150 and 200 °C. In the Rutherford backscattering spectra the layer structure is resolved in all three cases. The multilayers deposited at 150 and 200 °C show interlayers of mixed Mo and Si of different thicknesses on the two sides of a Mo layer. The most distinct layer structure is found for the 150 °C sample, whereas the spectra for the 30 °C sample indicate a larger interfacial roughness and those for the 200 °C sample larger interfacial layers of mixed mo and Si than for the 150 °C sample. On baking the multilayers to temperatures higher than 400 °C, interdiffusion of Mo and Si is observed. The multilayers deposited at 150 and 200 °C are destroyed after baking to 600 °C, whereas the multilayer deposited at 30 °C has already been destroyed after baking to 500 °C. Up to a baking temperature of 600 °C neither losses of material from the stack nor accumulation of Mo or Si at the surface or the interface between the stack and substrate are observed.
Erscheinungsjahr
1993
Zeitschriftentitel
Thin Solid Films
Band
228
Ausgabe
1-2
Seite(n)
60-63
ISSN
0040-6090
Page URI
https://pub.uni-bielefeld.de/record/1780391

Zitieren

Heidemann B, Tappe T, Schmiedeskamp B, Heinzmann U. High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films. 1993;228(1-2):60-63.
Heidemann, B., Tappe, T., Schmiedeskamp, B., & Heinzmann, U. (1993). High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films, 228(1-2), 60-63. https://doi.org/10.1016/0040-6090(93)90564-6
Heidemann, B., Tappe, T., Schmiedeskamp, B., and Heinzmann, U. (1993). High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films 228, 60-63.
Heidemann, B., et al., 1993. High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films, 228(1-2), p 60-63.
B. Heidemann, et al., “High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers”, Thin Solid Films, vol. 228, 1993, pp. 60-63.
Heidemann, B., Tappe, T., Schmiedeskamp, B., Heinzmann, U.: High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films. 228, 60-63 (1993).
Heidemann, B., Tappe, T., Schmiedeskamp, B., and Heinzmann, Ulrich. “High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers”. Thin Solid Films 228.1-2 (1993): 60-63.
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