Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target
Göckel D, Baum G, Fromme B, Lehmann V, Lohmann B, Raith W (1990)
Physical Review B 42(11): 7242-7244.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
Download
Autor*in
Göckel, Dorothee;
Baum, GünterUniBi;
Fromme, BärbelUniBi;
Lehmann, Volker;
Lohmann, Birgit;
Raith, Wilhelm
Abstract / Bemerkung
We report new measurements of circularly polarized recombination radiation from highly doped p-type GaAs emitted under impact of longitudinally polarized electrons with an initial kinetic energy varied between 2 and 10 eV. The work function of the target crystal is lowered by cesiation and oxidation of the surface. The results are discussed and compared with our earlier measurements on a clean GaAs crystal surface and with photoluminescence data.
Erscheinungsjahr
1990
Zeitschriftentitel
Physical Review B
Band
42
Ausgabe
11
Seite(n)
7242-7244
ISSN
0163-1829
eISSN
1095-3795
Page URI
https://pub.uni-bielefeld.de/record/1777140
Zitieren
Göckel D, Baum G, Fromme B, Lehmann V, Lohmann B, Raith W. Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target. Physical Review B. 1990;42(11):7242-7244.
Göckel, D., Baum, G., Fromme, B., Lehmann, V., Lohmann, B., & Raith, W. (1990). Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target. Physical Review B, 42(11), 7242-7244. https://doi.org/10.1103/PhysRevB.42.7242
Göckel, Dorothee, Baum, Günter, Fromme, Bärbel, Lehmann, Volker, Lohmann, Birgit, and Raith, Wilhelm. 1990. “Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target”. Physical Review B 42 (11): 7242-7244.
Göckel, D., Baum, G., Fromme, B., Lehmann, V., Lohmann, B., and Raith, W. (1990). Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target. Physical Review B 42, 7242-7244.
Göckel, D., et al., 1990. Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target. Physical Review B, 42(11), p 7242-7244.
D. Göckel, et al., “Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target”, Physical Review B, vol. 42, 1990, pp. 7242-7244.
Göckel, D., Baum, G., Fromme, B., Lehmann, V., Lohmann, B., Raith, W.: Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target. Physical Review B. 42, 7242-7244 (1990).
Göckel, Dorothee, Baum, Günter, Fromme, Bärbel, Lehmann, Volker, Lohmann, Birgit, and Raith, Wilhelm. “Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target”. Physical Review B 42.11 (1990): 7242-7244.
Alle Dateien verfügbar unter der/den folgenden Lizenz(en):
Copyright Statement:
Dieses Objekt ist durch das Urheberrecht und/oder verwandte Schutzrechte geschützt. [...]
Volltext(e)
Name
Access Level
Open Access
Zuletzt Hochgeladen
2019-09-06T08:48:24Z
MD5 Prüfsumme
12f78e37a8993115aa8e593e81335a38
11 References
Daten bereitgestellt von Europe PubMed Central.
AUTHOR UNKNOWN, sov phys ?jetp 33(), 1971
AUTHOR UNKNOWN, sov phys ?solid state 13(), 1972
AUTHOR UNKNOWN, jetp lett 13(), 1971
AUTHOR UNKNOWN, sov phys ?jetp 57(), 1983
Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons.
Fromme B, Baum G, Gockel D, Raith W., Phys. Rev., B Condens. Matter 40(18), 1989
PMID: 9991863
Fromme B, Baum G, Gockel D, Raith W., Phys. Rev., B Condens. Matter 40(18), 1989
PMID: 9991863
Spin-Polarized Inverse Photoelectron Spectroscopy of Solid Surfaces: Ni(110)
Unguris, Physical Review Letters 49(14), 1982
Unguris, Physical Review Letters 49(14), 1982
Work function measurements on MBE GaAs(001) layers
Massies, Journal of Vacuum Science and Technology 16(5), 1979
Massies, Journal of Vacuum Science and Technology 16(5), 1979
Emission of circularly polarized recombination radiation from p-doped GaAsP bombarded with longitudinally polarized electrons
Fromme, Physics Letters A 118(5), 1986
Fromme, Physics Letters A 118(5), 1986
Semiconducting and other major properties of gallium arsenide
Blakemore, Journal of Applied Physics 53(10), 1982
Blakemore, Journal of Applied Physics 53(10), 1982
The GaAs spin polarized electron source
Pierce, Review of Scientific Instruments 51(4), 1980
Pierce, Review of Scientific Instruments 51(4), 1980
The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
Thurmond, Journal of The Electrochemical Society 122(8), 1975
Thurmond, Journal of The Electrochemical Society 122(8), 1975
Export
Markieren/ Markierung löschen
Markierte Publikationen
Web of Science
Dieser Datensatz im Web of Science®Quellen
PMID: 9994854
PubMed | Europe PMC
Suchen in
Google Scholar